Environmental Engineering Reference
In-Depth Information
Figure 3.12
Schematics of three device building blocks: (a) a metal-
semiconductor junction between an armchair and a zigzag GNR, (b) a
p
-
n
junction between two zigzag GNRs with different edge doping, and (c)
a heterojunction between two zigzag GNRs of different width (band gap).
(d) Schematics of a GNR-FET, made from one zigzag semiconductor GNR
channel and two armchair metallic GNR leads connected to two external
metalelectrodes.ReprintedwithpermissionfromRef.[52].Copyright2007
American Chemical Society.
Fig.3.13),graphene-basedsingle-electrontransistorsarerealizedas
demonstrated by arecent experiment [54].
Oneofthemostattractivefeaturesofgraphene-basedelectronics
is that everything in electronics including conducting channels,
quantum dots, barriers, electrodes, and interconnects can be pat-
terned in a single graphene plane. For instance, the flip-flop circuit
for high-frequency signal generation, as an example integrated
circuit, can find its graphene-based counterpart as depicted in
Fig. 3.14. As a consequence, atomic perfect interfaces are naturally
