Environmental Engineering Reference
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Figure 9.1 TypicalchangesinI-VcharacteristicsofAu-Sb/n-CdTecontacts
with applied electrical stress. Curve-1: The I-V curve of an as-made diode;
Curve-2: The deteriorated I-V curve of the same diode after application of
1.0 V forward bias for 1 hour in dark conditions; Curve-3: The improved I-
V curve after reversal to the original position when 1.0 V reverse bias was
applied for 10 hours under dark conditions.
darkconditiontoavoidtheeffectoflightonthediode.Inmanycases,
itwaspossibletoreverttotheoriginalI-Vcurve,asshownbycurve-
3inFig.9.1.ThisreversalofI-Vwouldvaryfromdiodetodiode,and
some needed only a few hours but others needed a longer period
of reverse-bias application. These results were observedin the mid-
1980s, but the behaviour could not be explained fully during that
time although the consensus was that this is due to effects of slow
traps.
With the improved understanding of metal/n-CdTe interfaces as
described in chapter four, these results can now be fully explained
using defect levels present at this interface. The energy band
 
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