Open Defects in Nanometer Technologies Models, Test and Diagnosis - Models in Hardware Testing - page 9

Fig. 1.7 Weak open defects ( Rodrıguez-Monta nes et al. 2002 ) . ( a ) Metal cavity and formation of
a weak open defect due to the Ti barrier and ( b ) resistive via

Weak opens Strong opens

100

Metal 1
Metal 2
Metal 3
Metal 4
Metal 5
Metal 6

80

60

40

20

0

< 100 k Ω Ω

to 1 M Ω

100 k Ω

to10 M Ω

1M 10M to

100 M Ω

Ω 100 M Ω

to1G Ω

> 1 G Ω

Fig. 1.8 Distribution of resistances for an open metal line ( Rodrıguez-Monta nes et al. 2002 )

Delay Model of Resistive Opens

Special attention has been paid to interconnect resistive opens. They can be modeled
like interconnect full opens, but replacing the complete disconnection by an open
resistance, as described in Fig. 1.10 . In the presence of an interconnect resistive
open, apart from the defect-free delay caused by the equivalent on resistance .R ON /
of the driving network and the total capacitance of the line (C), there is an extra
delay caused by the open. This delay depends on the open resistance .R o / and its
exact location along the defective line .'/, which determines the capacitance located
after the open ..1 '/ C/.