Hardware Reference
In-Depth Information
Fig. 6.11
Fault primitive classification based on (
a
) number of
f-cells
,and(
b
) number of sensitiz-
ing operations
Tabl e 6. 1
Static FPs space
#
FP
Fault model
1
<0=1= >
State-0 fault .SF
0
/
2
< 1=0= >
State-1 fault .SF
1
/
3
<0;
w
0
=1= >
Write-0 destructive fault .WDF
0
/
4
<0;
w
1
=0= >
Up transition fault .TF
1
/
5
<1;
w
0
=1= >
Down transition fault .TF
0
/
6
<1;
w
1
=0= >
Write-1 destructive fault .WDF
1
/
7
<0;r
0
=0=1 >
Incorrect read-0 fault .IRF
0
/
8
<0;r
0
=1=0 >
Deceptive read-0 destructive fault .DRDF
0
/
9
<0;r
0
=1=1 >
Read-0 destructive fault .RDF
0
/
10
<1;r
1
=0=0 >
Read-1 destructive fault .RDF
1
/
11
<1;r
1
=0=1 >
Deceptive read-1 destructive fault .DRDF
1
/
Incorrect read-1 fault
.
IRF
1
/
12
<1;r
1
=1=0 >
6.4.3.1
Single-Cell Static Faults
In a single-cell static fault, a single generic memory cell i is responsible either for
sensitizing, and manifesting the effect of the fault. As we work with a single cell,
the notation presented in Section
6.4.1
can be simplified by omitting the information
about the cell address.
The single-cell static fault condition, i.e.,
j
f
j D
1,andm
1, leads to the
SOS
2
˚
0
0
0
I
0
1
0
I
0
0;
w
0
0
I
0
0;
w
1
0
I
0
1;
w
0
0
I
0
1;
w
1
0
I
0
0; r
0
0
;
0
1; r
1
0
(6.6)
that allows the definition of the space of static FPs reported in Table
6.1
where the
right most column reports the common name of the fault model associated with the
given FP.
