Hardware Reference
In-Depth Information
Fig. 6.10
Device level structural model of a 3 3 SRAM
improvement of silicon technology leading to an increased sensitivity to fabrication
defects and environmental stress.
Given this premise, a complete description of all proposed FFMs and related fault
mechanisms would be too long to fit a single book chapter. Moreover, the continuous
technology improvement would make it outdated in a short time. For this reason this
section will focus on the basic concepts and theories required to understand and to
work with memory FFMs, introducing a reduced set of well established FFMs, only.
According to the simplified RT-Level structural model proposed in Fig. 6.9 ,
FFMs can be classified according to the targeted functional block as: FFMs for
 
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