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F 4 B + N 2
R
O
e
O
H
H
H
Mo
O
O
N + Bu 4
O
Si
Si
Si
O
O
Mo
O
O
M o
O
Mo
O
Si(111)
O
Mo
O
O
O
O
O
Mo
.
O
.
.
BF 4
N
BF 4 N 2
R
R
R
H
H
H
.
H
H
H
H
H
.
Si
Si
Si
HBF 4
Si
Si
Si
Si
Si
Si
-N 2
Si(111)
Si(111)
Si(111)
NH 2
NO 2
N(CH 3 ) 2
R
R
N 2 + BF 4
N 2 +
N 2 + BF 4
N 2 + BF 4
H
4
Increasing relative
electron donor ability
(a)
3
2
1
Si
Si
Si
Si(111)
(b)
Figure 11.10. (a) Molecular structures used for grafting atop the pseudo-MOSFET
channel. Structures of the starting molecules (1-4) used in the present contribu-
tion where (1) is the most electron rich system due to the dimethylamino
substituent, (2) is slightly lower in its electron donation capability, followed by
(3),andthenfinally(4) bears an extremely electropositive polymolybdate. (b).
The grafting mechanism.
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