MOLECULAR COMPUTING: INTEGRATION OF MOLECULES FOR NANOCOMPUTING - Bio-Inspired and Nanoscale Integrated Computing - page 303

initial

write

read

erase

Au Au

Au

Au

O 2 N

O 2 N O 2 N

O 2 N

NH 2

NH 2

NH 2 NH 2

I

I

S S

S

S

Au

Au

Au Au

low σ high σ high σ low σ

Figure 11.4. Write, read, and erase sequences for a nitroaniline OPV in the
nanopore and its use as a 1-bit random access memory: An initially low
conductivity state (low s) is changed (written) into a high conductivity state
(high s) upon application of a voltage pulse at approximately 2 V. The direction
of current that flows during this ''write'' pulse is diagrammed. The high s state
persists as a stored ''bit,'' which is read in the low voltage region, approximately
0.3 V, as a nondestructive read. Again, this effect persisted up to 260 K. No
particular mechanism, for example charge storage on the molecule vs. molecular
tilting vs. molecular rotations, is implied by this scheme.

read read

Input

Output

write write

erase

erase

Figure 11.5. The mDRAM cell input and output that are constructed from the
mononitro OPV in the nanopore.