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R = 1.2 k Ω
R
R
R
10 V PP
7.5 V PP
5 V PP
2.5 V PP
Figure 5.3. Dark-field microscope image demonstrating the trapping of large
numbers of nanostructures, which are visible as lines perpendicular to the
electrode faces, at relatively low voltages.
nanorods and nanobelts [18, 19], and gold nanowires [20]. An example of the
ability of dielectrophoresis to trap nanostructures with relatively low voltages is
shown in Figure 5.3. Previous electrical transport measurements of dielectrophore-
tically trapped structures have been performed either after immobilizing the
structures through drying [15-19] or chemical binding [20], or performed over
large films of parallel interconnects [16]. In this work we demonstrate for the first
time that dielectrophoresis may also be used to reconfigure and disassemble
nanowire interconnects and that our process is compatible with the assembly
and electronic characterization of individual nanowire devices.
5.3. DIELECTROPHORETIC RECONFIGURATION OF NANODEVICES
Assembly of nanodevices is itself worthy of scientific interest, but the beauty of
dielectrophoretic architectures lies in their versatility, since they enable not just the
assembly but the reconfiguration of nanodevices as well. We now proceed to
discussion of the recent experimental demonstration of reconfigurable nanowire
interconnects [21], which exemplifies that versatility.
5.3.1. Fabrication of a Nanowire Trapping Architecture
For interconnects, p-type silicon nanowires were grown by the vapor-liquid-solid
method [22], using 20-nm Au nanocluster catalysts (Ted Pella), and SiH 4 reactant
 
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