Biomedical Engineering Reference
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c
a
b
InAs
Ga
InAs
GaAs (001)
GaAs (001)
GaAs (001)
As 4
Ga
As 4
Ga
As 4
GaAs
AsBr 3
In
As 4
In
As 4
In
As 4
In
As 4
As 4
In
d
e
InAs
InAs
150-nm
In 0.15 Ga 0.85 As
GaAs
InGaAs
superlattice
GaAs (311)B
GaAs (001)
Fig. 3.1 Growth process and evolution schematics of lateral QDMs grown on various templates:
( a ) nanohole, ( b ) nanomound, and ( c ) nanohole-and-mound. Schematic cross-sectional structures
of lateral QDMs formed on ( d ) InGaAs/GaAs-(3 1 1)B superlattice and ( e ) InGaAs/GaAs-(0 0 1)
cross-hatch pattern templates
and coupling control. Most procedures reported so far are based on InGaAs/GaAs
systems using some kinds of templates and employ standard (0 0 1)-GaAs substrates
as summarized in Fig. 3.1 and described below.
3.2.1
QDMs on Nanohole Templates
This procedure was first reported by Songmuang et al. in 2003 [ 10 ]andshown
in Fig. 3.1 a. The first step is the formation of standard InAs QDs on a flat GaAs
substrate. The seed QDs are then capped with 10-nm GaAs, resulting in QDs
 
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