Biomedical Engineering Reference
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C i
Gate insulator
C sc
Si
(a)
DNA
Ions
C ML
R ML
C i
Gate insulator
Si
C sc
(b)
FIGURE 7.3 Simplifi ed equivalent circuit of an original (unmodifi ed) EIS structure (a) and EIS biosen-
sor functionalized with charged macromolecules (b). C i , C sc and C ML are capacitances of the gate insulator,
the space-charge region in the semiconductor, and the molecular layer, respectively; R ML is the resistance of
the molecular layer.
C
Increasing of negative
charges on an insulator
surface
V fb
EIS
EISDNA
p-Si
Voltage
FIGURE 7.4 Capacitance-voltage ( C-V ) curve for a bare (unmodifi ed) EIS sensor and EIS sensor with
a molecular layer (here, DNA). The presence of the additional molecular layer shifts the C-V curve of the
original EIS structure along both the capacitance (∆ C ) and voltage axis (∆ V fb ).
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