Biomedical Engineering Reference
In-Depth Information
Figure 1. (A) Schematic of a p-type planar FET device, where S, D and G corre-
spond to source, drain and gate electrodes, respectively. (B) Schematic of electrical-
ly based sensing using a p-type NWFET, where binding of a charged biological or
chemical species to the chemically modified gate dielectric is analogous to applying
a voltage using a gate electrode. (C) (left) Schematic illustration of a nanowire
field-effect transistor configured as a sensor with antibody receptors (blue). (right)
Binding of a protein with a net negative charge to a p-type nanowire yields an in-
crease in conductance.
 
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