Measurement Results for the Frequency-Tunable CMOS RF Power Amplifie - Linear CMOS RF Power Amplifiers for Wireless Applications - page 104

Fig. 7.5 Measured 2-tone IMD3 and PAE at 5.2 GHz for the stand-alone RF PA. IMD3 limit of

− 35 dBc is also shown ( dashed line )

Table 7.2 Summary of
measured 2-tone results at
−

Parameter Value

35 dBc IMD3 for the
stand-alone RF PA operating
at 5.2 GHz

Input power (dBm) 6 . 3

Gain (dB) 7 . 7

Output power (dBm) 14 . 1

PA E ( % ) 9 . 7

Fig. 7.6 Three-terminal
transformer configuration for
on-wafer characterization

The characterization was performed through S-parameters measurement using
the network analyzer HP8719D [ 1 ] connected to the SUSS MicroTec cryogenic
prober PMC150 [ 15 ]. Full 2-port calibration was performed prior to the measure-
ments.
The physically-based equivalent circuit model for such a structure [ 12 , Fig. 22]
isgiveninFig. 7.8 . This circuit can be divided in two parts. The first comprises
the components that can be extracted with Low-Frequency (LF) measurements:
L 1 , R Ls1 , L 2 , R Ls2 , and k . The second consists of the remaining components that are