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PMOS
CM1
+V
PMOS
CM2
+V
M n2
M p3
M p2
M n7
M n3
X
Z
i x
i z
Y
M p4
M p1
M n1
V B
M n6
M n5
M n4
−V
Fig. 4.3 An equivalent representation of the CMOS CCII+ circuit proposed by Cheng and
Toumazou [ 9 ]
When this circuit was simulated in HSPICE biased with 3 V DC supply, at
terminal-Y the circuit exhibited almost an infinite input resistance whereas
terminal-X exhibited a very low and almost linear input resistance which was
found to be of the order of 1.9
Ω
(DC to 100 KHz). As the input signal frequency
is increased R x increases to 3.9
at 10 MHz. The voltage gain
between ports Y and X exhibited a bandwidth around 13 MHz whereas the
bandwidth of the current gain between port Z and X was found to be around
10 MHz.
Ω
at 1 MHz and 37.4
Ω
4.4 Class AB First Generation Current Conveyors
The traditional class AB CMOS current conveyor shown in Fig. 4.4a suffers from
the drawback of poor control of quiescent current level as there is no mechanism for
setting up the intended DC bias current in the circuit. To circumvent this problem,
Bruun in [ 10 ] presented a CMOS architecture which contains an elegant bias
stabilization scheme. This circuit is shown in Fig. 4.4b . This circuit incorporates
a way to stabilize the quiescent current which consists of feeding back only a
fraction
1 of the X-input branch current to the Y-input branch current and
providing the remaining part of the Y-input branch current as a fixed current I ss to
the level shifting transistors M 1 and M 2. As a consequence, the quiescent current
level in each branch is equal to
ʻ FB <
 
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