Hardware Reference
In-Depth Information
ʼ
p
W
p
L
p
ʼ
n
W
n
ð
9
:
4
Þ
L
n
An analysis of the circuit of Fig.
9.5
gives the characterizing equations of the circuit
as:
i
X
V
X
V
Y
þ
r
ʼ
p
W
p
ð
9
:
5
Þ
q
ʼ
n
W
n
L
n
p
2
I
B
C
0
x
L
p
þ
1
R
x
r
ʼ
p
W
p
L
p
þ
ð
9
:
6
Þ
q
ʼ
n
W
n
L
n
p
2
I
B
C
0
x
where Rx is the transresistance at port-X.
Thus, in this case also, R
x
is controllable by DC-bias current I
B.
For further
detailed analysis of this circuit, the reader is referred to [
3
]. Several other interesting
CMOS-based CCCII configurations have also been advanced, for instance, see [
4
-
7
].
A 2GHz Bi-CMOS CCCII in standard 0.8
m BiCMOS technology was pro-
posed by Seguin and Fabre in [
8
] which can be equivalently shown as in the circuit
of Fig.
9.6
.
In this circuit, the signal processing portion is made of only NPN transistor
Q
1
-Q
6
and the DC biasing circuit is composed of a P-MOS repeater and N-MOS
μ
+V
PMOS Current repeater
2
I0
I
0
I
0
I
0
i
2
I0
−i
i
z
Q
5
Z
+V
Q
2
Q
1
i
x
i
X
I
0
Y
Q
6
I
0
I
0
I
0
Q
4
Q
3
NMOS Current repeater
−V
Fig. 9.6 Bi-CMOS CCCII architecture [
8
]
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