Hardware Reference
In-Depth Information
ʼ p W p
L p ʼ n W n
ð
9
:
4
Þ
L n
An analysis of the circuit of Fig. 9.5 gives the characterizing equations of the circuit
as:
i X
V X
V Y þ
r
ʼ p W p
ð
9
:
5
Þ
q
ʼ n W n
L n
p
2 I B C 0 x
L p þ
1
R x
r
ʼ p W p
L p þ
ð
9
:
6
Þ
q
ʼ n W n
L n
p
2 I B C 0 x
where Rx is the transresistance at port-X.
Thus, in this case also, R x is controllable by DC-bias current I B. For further
detailed analysis of this circuit, the reader is referred to [ 3 ]. Several other interesting
CMOS-based CCCII configurations have also been advanced, for instance, see [ 4 - 7 ].
A 2GHz Bi-CMOS CCCII in standard 0.8
m BiCMOS technology was pro-
posed by Seguin and Fabre in [ 8 ] which can be equivalently shown as in the circuit
of Fig. 9.6 .
In this circuit, the signal processing portion is made of only NPN transistor
Q 1 -Q 6 and the DC biasing circuit is composed of a P-MOS repeater and N-MOS
μ
+V
PMOS Current repeater
2 I0
I 0
I 0
I 0
i
2 I0 −i
i z
Q 5
Z
+V
Q 2
Q 1
i x
i
X
I 0
Y
Q 6
I 0
I 0
I 0
Q 4
Q 3
NMOS Current repeater
−V
Fig. 9.6 Bi-CMOS CCCII architecture [ 8 ]
Search WWH ::




Custom Search