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V GA (V GB )
V in1
V GB (V GA )
X
I 0
Z
CCII+
V GB (V GA )
Y
V in2
V GA (V GB )
Fig. 8.11 Voltage- to- current converter using MOS resistive circuit [ 1 ]
V GA (V GB )
V in1
V GB (V GA )
V 0
X
CCII+
Z
V GB (V GA )
V 2
Y
V in2
V GA (V GB )
Fig. 8.12 An alternative analog divider circuit [ 1 ]
The workability of all the mentioned circuits has been verified in [ 1 ]by
implementing the CCII+ using the supply current sensing technique based upon
LF356 IC op-amps and CA3096 type transistor arrays. However, it is obvious that
all the circuits can be implemented in entirely CMOS technology by employing
CMOS CCII+ architectures instead of the CCII+ obtained by power supply sensing
technique.
In Fig. 8.14 , assuming that the MOSFETs are operating in triode region and are
characterized by the following relationship between the drain current and gate-to-
source and drain-to-source voltages.
 
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