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+V DD
I r2
Ir1
M rP2
M rP1
M rN2
MrN1
M OP
M N2
M OPC
MA
M N1
V Y
M O
V Y
I BIAS
V Z
V X
M p1
V Y
M ONC
M p2
M ON
M B
M rp3
M rp4
M rN3
M rN4
I r4
I r3
−V SS
Fig. 4.13 CC proposed by Kasemsuwan and Nakhlo [ 52 ]
channel inversion layer. Thus, a bulk-driven MOSFET can effectively work under
negative, zero or even slightly positive biasing conditions.
Khateb et al. [ 60 ] proposed a CCII architecture using a folded-cascode bulk-
driven OTA structure consisting of transistors M 1 -M 11 where M 1 -M 2 constitute the
input stage, M 6 -M 7 provide a level shift stage and the MOSFETs M 8 -M 8c ,M 9 -M 9c
constitute a cascode current mirror which performs the operation of differential to
single-ended conversion (Fig. 4.14 ). The MOSFETs M 3 -M 4 provide the current
necessary for the input and output branches. The transistors M 10 -M 11 constitute the
second stage of the OTA. Transistors M 12 -M 13 and M 14 -M 15 are identical to
transistors M 10 and M 11 respectively. Since the gates of M 11 ,M 13 and M 15 ,M 10
and M 12 ,M 14 are tied together, the currents in the branches M 10 -M 11 ,M 12 -M 13 an
M 14 -M 15 are necessarily same.
The simulation results of this low-voltage, low-power bulk-driven CCII demon-
strate that both the current and voltage ratios are exactly unity with the 3 dB
bandwidth in excess of 10 MHz, with DC biasing voltage as low as 0.38 V the
 
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