Image Processing Reference
In-Depth Information
5
In-Situ Supply-Noise Measurement in LSIs
with Millivolt Accuracy and Nanosecond-Order
Time Resolution
Yusuke Kanno
Hitachi LTD.
Japan
1. Introduction
This chapter explores signal analysis of a circuit embedded in an LSI to probe the voltage
fluctuation conditions, and is described as an example of digital signal processing 1 .As
process scaling has continued steadily, the number of devices on a chip continues to grow
according to Moore's Law and, subsequently, highly integrated LSIs such as multi-CPU-core
processors and system-level integrated Systems-on-a-Chip (SoCs) have become available.
This technology trend can also be applied to low-cost and low-power LSIs designed especially
for mobile use. However, it is not the increase in device count alone that is making chip
design difficult. Rather, it is the fact that parasitic effects of interconnects such as interconnect
resistance now dominate the performance of the chip. Figure 1 shows the trends in sheet
resistance and estimated power density of LSIs. These effects have greatly increased the
design complexity and made power-distribution design a considerable challenge.
4
Sheet resistance
of power supply
3
Ref. ITRS '05
2
Estimated
power density
1
hp32
hp90
hp65
hp45
0
2005
2007
2009
2011
2013
Year
Fig. 1. Trends in sheet resistance and estimated power density.
1 © 2007 IEEE. Reprinted, with permission, from Yusuke Kanno et al, “In-Situ Measurement of
Supply-Noise Maps With Millivolt Accuracy and Nanosecond-Order Time Resolution”, IEEE Journal
of Solid-State Circuits, Volume: 42 , Issue: 4, April, 2007 (Kanno, et al., 2007).
 
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