Environmental Engineering Reference
In-Depth Information
ceramics Li
2
B
4
O
7
+ 5% SiO
2
+ 0.01% Pt or thin evaporated layers on a LiF single crystal. From the information on the
thermally-stimulated-electron-emission glow pattern of the duplicated structure sample it may be possible to measure the dose
of each kind of radiation separately in a mixed radiation field.
Nanostructured films of germanium (ge) and silicon (Si) doped with boron isotope
10
B are known to be the best materials
for the preparation of novel, highly effective, and sustainable neutron-radiation sensors [24]. Boron atoms, originally shallow
acceptors for ge and Si, change their charge because of (n, α) nuclear reaction on
10
B stimulated by neutron irradiation bearing
Li, which is a shallow donor for these semiconductors. Charge carrier concentration changes (a single captured neutron reverses
a single charge) are easy to fix with precision with the help of an electrical measuring instrument. This provides an opportunity
to measure neutron fluence up to neutrons of very high density. Novel sensors should rely on one or more sensing mechanisms
and produce a signal that indicates the nuclear/ionizing radiation value. For them it is also convenient to operate by so-called
smart or intelligent sensory systems. ion-implanted semiconductor neutron-sensor was designed by guldamashvili et al. [25,
26]. it contains a p-n junction with an inversion layer of p-type made by doping n-Si with
10
B-ions. The sensor can work both
in counter and dosimeter modes.
Finally, we have evaluated [27] the key physical-technical characteristics of neutron detectors made from
10
B-enriched
semiconducting materials: thickness of the effective working layer ~10 mm, releasing rate of the
10
B-n interaction products
~10
15
cm
-3
s, electron-hole pairs generating rate in process of neutron absorption ~10
22
cm
-3
s, rate of rise in the temperature
~10K s
-1
, and device mean operating time ~10
−4
s.
in conclusion, nanolayers made up of
10
B isotope-enriched elemental boron crystalline modifications, semiconducting boron
compounds (boron carbides, nitrides, phosphides, etc.), and boron-doped common semiconductor materials can serve as
working bodies for effective neutron-fluence electronic sensors of various types.
reFereNces
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10
B/
11
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tors. Appl Phys Lett 2002;80:3644-3646.
[15] Oda K, Miyake H, Michijima M. Cr39-BN detector for thermal neutron dosimetry. J Nucl Sci Technol 1987;24:129-134.
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[17] Majety S, Li J, Cao XK, Dahal r, Lin JY, Jiang HX. Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride
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10
BP single crystal wafers. in:
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