Environmental Engineering Reference
In-Depth Information
The
η
ohmic
term decribes the ohmic loss through the electrode area
A
and may be
written in terms of an ohmic resistance,
R
ohmic
(Nozik, 1978):
η
ohmic
=
J
cell
AR
ohmic
(10.4.38)
The left term in Equation 10.4.38 represents the net photon energy necessary to gener-
ate an electron-hole pair in the semiconductor and that has to equal the electrochemical
work described by the right hand of the same equation.
10.4.2.2 Metal-liquid interface
In a PEC cell for water-splitting electrons return from the external circuit to the counter-
electrode in order to reduce water into hydrogen. This reaction occurs in the surface of
a metal electrode, typically a platinum wire. The interface electrolyte metal electrode
can be treated as an electrochemical half-cell and described using the well-known
Butler-Volmer equation:
j
0
C
R
C
0
R
exp
βzeη
c
kT
exp
−
C
P
C
0
P
(
1
−
β) zeη
c
kT
j
=
−
(10.4.39)
where
η
is the overvoltage,
z
is the number of electrons transferred in the electro-
chemical reaction,
C
R
and
C
P
are the surface concentrations of the reactants and
products,
j
0
is the exchange current density (Aruchamy et al., 1982). Basically, Butler-
Volmer equation states that the current produced by an electrochemical reaction
increases exponentially with the activation overvoltage. Taken as an example the
electrolyte/platinum interface in a PEC cell system for water-splitting, Equation 10.4.38
becomes:
j
0
n
H
2
O
(
b
)
n
re
H
2
O
(
b
)
exp
βzqη
Pt
k
B
T
exp
−
n
H
2
(
b
)
n
OH
−
(
b
)
n
re
H
2
(
b
)(
n
re
OH
−
)
2
(
b
)
(1
−
β
)
zqη
Pt
k
B
T
j
=
−
(10.4.40)
The overpotential may be regarded as the extra voltage needed to reduce the energy
barrier of the rate-determining step to a value such that the electrode reaction proceeds
at a desired rate. Thus, this equation tells us that if we want more current we have to
pay a price in terms of voltage lost - overvoltage.
10.4.2.3 PEC cell photoresponse
The photoresponse of the PEC cell will be determined by the behavior of photogener-
ated electron-hole pairs and thus the physical properties of the semiconductor. Thus,
the photocurrent flowing through the interface, under illumination, was derived by
Gärtner, for an n-type semiconductor, as follows:
eI
0
1
exp(
−
βW
)
j
G
=
j
0
+
−
(10.4.41)
1
+
βL
p
where
I
0
, is the incident photon flux,
β
is the absorption coefficient (assuming
monochromatic illumination),
W
is the depletion layer width,
L
p
is the hole diffu-
sion length and
j
0
is the exchange current density. The Gärtners's model assumes that
Search WWH ::
Custom Search