Image Processing Reference
In-Depth Information
(a)
Gate electrode
SiO
2
p
-type substrate
V
g
Interface state
0
Gate voltage
Potential
n
-
layer
(b)
SiO
2
Gate electrode
p
-type substrate
V
g
+
+
+
+
+
+
Ionized donor
0
Channel potential
Charges
Potential
(c)
BCCD
φ
ch
0
SCCD
0
Pinning voltage
Gate voltage
V
g
(V)
FIGURE 5.6
Comparisons between SCCD and BCCD of (a) structure and potential distribution and (b) gate voltage depen-
dence of channel potential.
