Types of Image Sensors - Essential Principles of Image Sensors - page 126

References
1. T. Kuroda, Japan in the world of image sensors—What Japan has been playing the role of, and
what could be learnt from the history, Journal of ITE , 65(3), 336-341, 2011. https://www.jstage.
jst.go.jp/article/itej/65/3/65_3_336/_pdf (accessed January 10, 2014).
2. W. S. Boyle, G. E. Smith, Charge coupled semiconductor devices, Bell System Technical Journal ,
49, 587-593, 1970.
3. R. H. Walden, R. H. Krambeck, R. J. Strain, J. McKenma, N. L. Schryer, G. E. Smith, The buried
channel charge coupled device, Bell System Technical Journal , 51, 1635-1640, 1972.
4. M. F. Tompsett, G. F. Amelio, W. J. Bertran, R. R. Buckley, W. J. Mcnamara, J. C. Mikkelsen, D. A.
Sealer, Charge-coupled imaging devices: Experimental results, Transactions on Electron Device ,
18(11), 992-996, 1971.
5. G. F. Amelio, Physics and applications of charge-coupled devices, IEEE Intercon , 1/3, 1973.
6. S. Okamoto, T. Kuroda, Japan patent, 3303384 (May 10, 2002).
7. Y. Sone, K. Ishikawa, S. Hashimoto, T. Kuroda, Y. Ohkubo, A single chip CCD color camera
system using field integration mode, Journal of the Institute of Television Engineers of Japan , 37(10),
855-862, 1983.
8. Y. Ishihara, K. Tanigaki, A high photosensitivity IL-CCD image sensor with monolithic resin
lens array, in Proceedings of the International Electron Devices Meeting , 19-3, pp. 497-500, 1983,
Washington, DC.
9. A. Tsukamoto, W. Kamisaka, H. Senda, H. Niisoe, H. Aoki, T. Otagaki, Y. Shigeta, et al., High
sensitivity pixel technology for a 1/4-inch PAL 430 k pixel IT-CCD, in Proceedings of the IEEE
Custom Integrated Circuits Conference , pp. 39-42. 5-8 May 1996, San Diego, CA.
10. C. H. Sequin, Blooming suppression in charge coupled area imaging, Bell System Technical
Journal , 51, 1923-1926, 1972. http://www.alcatel.hu/bstj/vol51-1972/articles/bstj51-8-1923.
pdf (accessed January 10, 2014).
11. Y. Ishihara, E. Oda, H. Tanigawa, A. Kohno, N. Teranishi, E. Takeuchi, I. Akiyama, T. Kamata,
Interline CCD image sensor with an anti blooming structure, in Proceedings of the IEEE
International Solid-State Circuits Conference Digest of Technical Papers , pp. 168-169. 10-12 February
1982, San Francisco, CA.
12. T. Kuroda, K. Horii, S. Matsumoto, Y. Hiroshima, High performance interline transfer CCD,
National Technical Report , 28(2), 12: 107-116, 1982.
13. N. Teranishi, A. Kohno, Y. Ishihara, E. Oda, K. Arai, No image lag photodiode structure in the
interline CCD image sensor, IEDM Digest of Technical Papers , 12(6), 324-327, 1982.
14. T. Kuroda, K. Horii, Japan patent, 1996064 (March 13, 1992).
15. T. Kozono, T. Kuroda, Y. Matsuda, T. Yamaguchi, T. Kuriyama, S. Matsumoto, E. Fujii, Y.
Hiroshima, K. Horii, Small image size CCD sensor, ITE Technical Report, TEBS 109-5, pp. 25-30,
1986.
16. B. C. Burkey, W. C. Chang, J. Littlehale, T. H. Lee, T. J. Tredwell, J. P. Lavine, E. A. Trabka, The
pinned photodiode for an interline-transfer CCD image sensor, IEDM Digest of Technical Papers ,
2(3), 28-31, 1984.
17. K. Horii, T. Kuroda, T. Kunii, A new configuration of CCD imager with a very low smear level,
Electron Device Letters , EDL-2, 12, 1981.
18. G. P. Weckler, A silicon photodevice to operate in a photon flux integration mode, in Proceedings
of International Electron Devices Meeting Digest of Technical Papers , 10-5, October 1965, Washington,
DC.
19. G. P. Weckler, Operation of p-n junction photodetectors in a photon flux integrating mode,
Journal of Solid-State Circuits , 2, 65-73, 1967.
20. M. Masuda, M. Noda, Y. Saito, S. Ohba, K. Takahashi, T. Fujita, Solid state color camera with
single-chip MOS imager, ITE Technical Report, 4, 41, TEBC69-1, pp. 1-6, February 1981.
21. I. Takemoto, MOS imager, Journal of ITE , 40(11), 1067-1072, 1986.