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than two different c 1 ′ values for metals and semiconductors, respectively. Moreover,
disappearance of h or h ′ in Eq. (2.28) implies that the unique parameter in deciding γ sl0 is H m .
300
Ni
Co
Pt
Pd
Ge
Mn
200
Cu
Fe
Au
Ag
Sb
100
Al
Ga
Sn
Bi
Pb
Hg
0
0
1
2
3
H m / V ( 10 9 J/m 3 )
Figure 2. γ sl ( D n , T n ) as a function of H m / V for a variety of elemental systems in terms of Eq. (2.28-a) (the
solid line ) where the symbols ■ and Δ denote the γ sl ( D n , T n ) values of metals and semiconductors,
respectively.
400
Ge
Ni
Co
Pt
300
Mn
Cu
Pd
Fe
Au
200
Ag
Sb
Al
θ = 0.1
Ga
100
Sn
Bi
Hg
Pb
0
0
1
2
3
H m / V (10 9 J/m 3 )
Figure 3. γ sl ( D n ′, T n ′) as a function of H m / V with θ = 0.1 for a variety of elemental systems in terms of
Eq. (2.29) (the solid line) where the symbols ■ and Δ denote the γ sl ( D n ′, T n ′) values of fcc and non-fcc
elements, respectively.
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