Image Processing Reference
In-Depth Information
t
p
PR (
K
p
)
σ
p
= σ
p0
+ σ
p1
e
ikx
g
t
d
Developer (
K
d
)
Effective developer
electrode position
FIGURE 10.45
Schematic of a development nip.
Similarly, the development process can be modeled completely using the
dot development models shown in Table 10.6 and the MTF equations shown in
Equation 10.65.
In a development nip, toners are recruited from the top of the magnetic brush to
the PR by electric
fields due to the latent image. Figure 10.45 shows a schematic of a
development nip. The MTF for the normal electric field at the surface of the magnetic
brush may be written as
K
d
A
k
þ
B
k
cosh(
kt
d
)
MTF(
k
) ¼
(
10
:
65
)
where A
k
and B
k
are given by
K
d
þ
1
K
d
1
A
k
¼
t
p
coth(
kt
p
)
sinh[
k
(
t
d
þ
g
)]
sinh[
k
(
t
d
g
)]
2
2
(
10
:
66
)
K
d
þ
K
d
t
K
p
1
1
B
k
¼
cosh[
k
(
t
d
þ
g
)] þ
cosh[
k
(
t
d
g
)]
2
2
k is the angular spatial frequency
t
p
is the PR thickness
K
p
is the PR dielectric constant
g is the air gap
t
d
is the effective developer layer thickness
K
d
is the dielectric constant of the developer
sinh(.), cosh(.), and coth(.) are hyperbolic sine, hyperbolic cosine, and hyper-
bolic cotangent functions, respectively
Note that Equation 10.65 is similar to the MTF derived by Neugebauer [33] and
others. The effective developer layer thickness may be expressed as
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