Image Processing Reference
In-Depth Information
t p
PR ( K p )
σ p = σ p0 + σ p1 e ikx
g
t d
Developer ( K d )
Effective developer
electrode position
FIGURE 10.45
Schematic of a development nip.
Similarly, the development process can be modeled completely using the
dot development models shown in Table 10.6 and the MTF equations shown in
Equation 10.65.
In a development nip, toners are recruited from the top of the magnetic brush to
the PR by electric
fields due to the latent image. Figure 10.45 shows a schematic of a
development nip. The MTF for the normal electric field at the surface of the magnetic
brush may be written as
K d
A k þ B k cosh( kt d )
MTF( k ) ¼
(
10
:
65
)
where A k and B k are given by
K d þ
1
K d
1
A k ¼ t p coth( kt p )
sinh[ k ( t d þ g )]
sinh[ k ( t d g )]
2
2
(
10
:
66
)
K d þ
K d
t K p
1
1
B k ¼
cosh[ k ( t d þ g )] þ
cosh[ k ( t d g )]
2
2
k is the angular spatial frequency
t p is the PR thickness
K p is the PR dielectric constant
g is the air gap
t d is the effective developer layer thickness
K d is the dielectric constant of the developer
sinh(.), cosh(.), and coth(.) are hyperbolic sine, hyperbolic cosine, and hyper-
bolic cotangent functions, respectively
Note that Equation 10.65 is similar to the MTF derived by Neugebauer [33] and
others. The effective developer layer thickness may be expressed as
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