Image Processing Reference
In-Depth Information
thickness are considered. It is especially important while comparing the perform-
ances of various photoconductors to one another:
V
V
i
S
¼
S
0
1
exp
(
10
:
23
)
L
L
where S
0
¼
S
00
(
, with S
00
and V
k0
as two additional param-
eters obtained from the physical properties of the photoconductor. The
L
0
)
and V
k
¼
V
k0
(
L
0
)
final PIDC
model is presented in Tables 10.3 and 10.4 that captures the functional form of the
TABLE 10.3
Exposure Model
General Springett
-
Melnyk Exposure Model:
V
(
X
)
V
r
V
i
V
r
e
h
0
C
X
¼
0,
V
(
X
)
V
i
þ
V
c
ln
þ
if
p
¼
1
(
10
:
17
)
"
#
p
1
p
1
V
c
1
p
V
c
V
(
X
)
V
r
V
c
V
i
V
r
e
h
0
C
X
¼
V
(
X
)
V
i
þ
þ
0,
if
p
6¼
1
(
10
:
18
)
QM Model (p
¼
2):
q
b
V
2
c
V
i
V
r
SX
1
2
2
V
(
X
) ¼
V
r
þ b þ
þ
V
2
c
where b ¼
V
i
V
r
(
10
:
19
)
(approximately, L
=
L
0
¼
L
L
0
V
r
¼
V
r0
1)
,
, V
k
¼
V
k0
V
V
i
L
L
0
L
L
0
S
¼
S
0
1
exp
S
0
¼
S
00
Dark Decay Model: Figure 10.7
Measured quantities: {V(X)} at different exposure points
Actuators: {V
g
, X}
TABLE 10.4
List of Parameters for a Photoconductor
QM PIDC Model
Parameters
Photoconductor
9 ergs
=
cm
2
X
334 V
=
(ergs
=
cm
2
)
S
00
V
k0
325 V
a
0.258
V
r0
20 V
L
¼
L
0
24
m
m
V
i
(400
-
800) V
p
2
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