Environmental Engineering Reference
In-Depth Information
Table 12. Degrees of test hardness of earthquake resistance
Degrees of Test for Installation Height, m
*
Mounting Technique
From 0 to 5
Inclusive
Over 5 to 10
Inclusive
Over 10 to 25
Inclusive
Over 25 to 35
Inclusive
Over 35 to 70
Inclusive
For Devices of Category I Earthquake Resistance
On building constructions
3
4
5
6
6
VI
On intermediate constructions
4
5
6
7
7
On technological equipment
4
5
6
7
7
On building constructions
4
5
6
6
7
VII
On intermediate constructions
5
6
7
7
8
On technological equipment
5
6
7
7
8
On building constructions
5
6
7
7
8
VIII
On intermediate constructions
6
7
8
8
9
On technological equipment
6
7
8
8
9
On building constructions
5
6
7
8
8
IX
On intermediate constructions
6
7
8
9
9
On technological equipment
6
7
8
8
9
For Devices of Category II Earthquake Resistance
On building constructions
−
1
2
2
2
V
On intermediate constructions
1
2
3
3
3
On technological equipment
1
2
3
3
3
On building constructions
1
2
3
3
3
VI
On intermediate constructions
2
3
4
4
4
On technological equipment
2
3
4
4
4
On building constructions
2
3
4
4
4
VII
On intermediate constructions
3
4
5
5
5
On technological equipment
3
4
5
5
5
On building constructions
3
4
5
5
5
VIII
On intermediate constructions
4
5
6
6
6
On technological equipment
4
5
6
6
6
* Earthquake intensity in points
Immunity to Electrical Action
their lack- on the basis of generalized working
parameters of electric EIF (Table 14).
Immunity to electric EIF is defined on the
basis of test results, during which operating stand-
alone component parts are sequentially put under
test influences, simulating electric low-frequency
field, possible in working operating conditions.
Parameters of test influences are chosen accord-
ing to Table 15.
Peripheral equipment, SHC and their operating
stand-alone component parts should be immune
to the influence of electric EIF (low-frequency
electric fields) in working operation conditions.
Actual or expected working values of intensity
of low-frequency electric fields in places of loca-
tion of these devices are determined on the basis
of experimental and/ or design data, in case of
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