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10. Soukiassian, L., Mayne, A., Carbone, M., Dujardin, G.: Atomic-scale desorption
of H atoms from the Si(100)-2 × 1: H surface: inelastic electron interactions. Phys.
Rev. B 68 (3), 035303 (2003)
11. Kuramochi, H., Uchida, H., Kuwahara, Y., Watanabe, K., Aono, M.: Site-
independent adsorption of hydrogen atoms deposited from a scanning tunneling
microscope tip onto a Si(111)-7
×
7 surface. Jpn. J. Appl. Phys. 36 (10A), L1343-
L1346 (1997)
12. Pitters, J.L., Livadaru, L., Haider, M.B., Wolkow, R.A.: Tunnel coupled dangling
bond structures on hydrogen terminated silicon surfaces. J. Chem. Phys. 134 (6),
064712 (2011)
13. Tong, X., Wolkow, R.A.: Electron-induced H atom desorption patterns created with
a scanning tunneling microscope: implications for controlled atomic-scale pattern-
ing on H:Si(100). Surf. Sci. 600 (16), L199-L203 (2006)
14. Haider, M., Pitters, J.L., DiLabio, G., Livadaru, L., Mutus, J., Wolkow, R.: Con-
trolled coupling and occupation of silicon atomic quantum dots at room tempera-
ture. Phys. Rev. Lett. 102 (4), 046805 (2009)
15. Livadaru, L., Pitters, J.L., Taucer, M., Wolkow, R.A.: Theory of nonequilibrium
single-electron dynamics in STM imaging of dangling bonds on a hydrogenated
silicon surface. Phys. Rev. B 84 (20), 205416 (2011)
16. Taucer, M., Livadaru, L., Piva, P.G., Achal, R., Labidi, H., Pitters, J.L., Wolkow,
R.A.: Single electron charging dynamics of atomic silicon quantum dots on the
H-Si(100) surface. arXiv:1305.3597
17. Oura, K., Lifshits, V.G., Saranin, A.A., Zotov, A.V., Katayama, M.: Hydrogen
interaction with clean and modified silicon surfaces. Surf. Sci. Rep. 35 , 1-69 (1999)
18. Lopinski, G.P., Wayner, D.D.M., Wolkow, R.A.: Self-directed growth of molecular
nanostructures on silicon. Nature 406 , 48-51 (2000)
19. Piva, P.G., DiLabio, G.A., Pitters, J.L., Zikovsky, J., Rezeq, M., Dogel, S., Hofer,
W.A., Wolkow, R.A.: Field regulation of single-molecule conductivity by a charged
surface atom. Nature 435 (7042), 658-661 (2005)
20. Piva, P.G., DiLabio, G.A., Pitters, J.L., Wolkow, R.A.: Electrostatically regulated
atomic scale electroconductivity device
21. Shockley, W., et al.: Electrons and Holes in Semiconductors, vol. 1. van Nostrand,
New York (1963)
22. Baseer Haider, M., Pitters, J.L., DiLabio, G.A., Livadaru, L., Mutus, J.Y.,
Wolkow, R.A.: Controlled coupling and occupation of silicon atomic quantum dots.
arXiv:0807.0609
23. Livadaru, L., Xue, P., Shaterzadeh-Yazdi, Z., DiLabio, G.A., Mutus, J., Pitters,
J.L., Sanders, B.C., Wolkow, R.A.: Dangling-bond charge qubit on a silicon surface.
New J. Phys. 12 (8), 083018 (2010)
24. Shaterzadeh-Yazdi, Z., Livadaru, L., Taucer, M., Mutus, J., Pitters, J.L., Wolkow,
R.A., Sanders, B.C.: On measuring coherence in coupled dangling-bond dynamics
(2013). arXiv:1305.6359
25. Piva, P.G., Wolkow, R.A., Kirczenow, G.: Nonlocal conductance modulation by
molecules: scanning tunneling microscopy of substituted styrene heterostructures
on H-terminated Si(100). Phys. Rev. Lett. 101 (10), 106801 (2008)
26. Kirczenow, G., Piva, P.G., Wolkow, R.A.: Modulation of electrical conduction
through individual molecules on silicon by the electrostatic fields of nearby polar
molecules: theory and experiment. Phys. Rev. B 80 (3), 035309 (2009)
27. Tong, X., Wolkow, R.A.: Scanning tunneling microscopy characterization of low-
profile crystalline TiSi 2
microelectrodes on a Si(111) surface. Appl. Phys. Lett.
86 (20), 203101 (2005)
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