Silicon Atomic Quantum Dots Enable Beyond-CMOS Electronics - Field-Coupled Nanocomputing: Paradigms, Progress, and Perspectives - page 44

(a)

(b)

(c) (d)

Fig. 11. The sequential building of a 2-dot cell occupied by one extra electron and
the polarization of that cell by one perturbing charge. (a) A room temperature STM
image approximately 3 nm across of H-terminated silicon surface. (b) The creation of
one ASiQD. (c) The creation of a second ASiQD and the concomitant reduction in
charge and darkness as seen by the STM. This tunnel coupled entity may be described
as an artificial homonuclear diatomic molecule. (d) Another charged DB is created.
This last dot is placed near enough to the molecule to affect it electrostatically, but
not so close as to be tunnel coupled. It is seen that the perturbation creates an analog
of a heteronuclear diatomic molecule as the bond is polarized.

Fig. 12. Two perturbing electrons are positioned along one diagonal to place a 4-dot,
2-electron cell into one polarized binary state at room temperature.