Environmental Engineering Reference
In-Depth Information
Fig. 6
Flowchart illustrating the classification of alternatives to ITO
where R
sh
is the sheet resistance, A is the absorbance, and t is the film thickness.
For thin films, this equation equates to
G
s
A
; where G
sh
is the sheet conductance.
Alternatively,
r
a
for thin films such as inorganic oxides in terms of transmittance
T and reflectance R can be written as [
13
];
r
a
¼
ffi
R
sh
In T
þ
R
g
ffi
1
f
ð
Þ
ð
3
Þ
where T is the total visible transmittance and R is the total visible reflectance. Note
that these equations do not take into account the percolation nature of nanowires
and carbon nanotubes.
For an ITO film with an R
sh
of 6 X!
-1
and an absorption coefficient of 0.04,
figure of merit ratio is 4. According to Eq. (
1
), a
r
a
1 is found necessary for
minimum power losses in various upscaling geometries of thin film solar cells
shown in Fig.
7
[
12
]. This corresponds to a T of 90 % and a R
sh
of 10 X!
-1
.
Values lower than this would result in precipitous loses in the efficiency of
monolithically integrated modules than in single cells (Fig.
7
). Monolithically
integrated modules are used in thin films inorganic and in PSCs, and are the more
cost-effectively produced designs that require no post processing assembly. Single
cells, on the other hand, demands labor-intensive post processing assembly and are
used in the first generation solar cells wherein silicon wafers are manually inter-
connected to produce a module.
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