Biomedical Engineering Reference
In-Depth Information
1.2 × 10
-9
1.6 × 10
-9
1.4 × 10
-9
1.2 × 10
-9
1.0 × 10
-9
8.0 × 10
-10
6.0 × 10
-10
4.0 × 10
-10
2.0 × 10
-10
0.0
V
ds
= 40V
1.0 × 10
-9
8.0 × 10
-10
6.0 × 10
-10
4.0 × 10
-10
V
gs
= 40V
V
gs
= 35V
V
gs
= 30V
V
gs
= 25V
V
gs
= 20V
V
gs
= 15V
V
gs
= 10V
V
gs
= 5V
V
gs
= 0V
2.0 × 10
-10
0.0
0
5
0 5
Drain voltage (V)
20
25
30
35
40
0
10
20
30
40
(
a
)
(
b
)
Gate voltage (V)
Figure 9.16
(a) Drain current versus drain voltage for dif erent gate voltages (b) Drain
current versus gate voltage plot of AZO thin i lm transistor embedded on a cantilever,
with SU-8 as a gate dielectric [29].
8.0 × 10
-9
7.5 × 10
-9
7.0 × 10
-9
6.5 × 10
-9
6.0 × 10
-9
5.5 × 10
-9
5.0 × 10
-9
4.5 × 10
-9
4.0 × 10
-9
3.5 × 10
-9
3.0 × 10
-9
2.5 × 10
-9
2.0 × 10
-9
1.5 × 10
-9
1.0 × 10
-9
5.0 × 10
-9
Vds = 40V
ε
= 0
Vgs = 40V
ε
= 0
ε
= 7 ×10
-2
ε
= 14 ×10
-2
ε
= 21 ×10
-2
ε
= 28 ×10
-2
ε
= 35 ×10
-2
1.0 × 10
-8
= 7 ×10
-2
ε
= 14 ×10
-2
8.0 × 10
-9
ε
= 21 ×10
-2
ε
= 28 ×10
-2
ε
ε
6.0 × 10
-9
= 35 ×10
-2
4.0 × 10
-9
2.0 × 10
-9
0.0
0.0
-5.0 × 10
-10
0
10
20
30
40
0
5
10 15 20
Drain voltage (V)
25
30
(
a
)
(
b
)
Drain voltage (V)
Figure 9.17
(a) Drain current versus drain voltage for dif erent strain values for AZO thin
i lm transistor embedded on a cantilever (b) Drain current plotted as a function of gate
voltage for dif erent strain values.
transfer characteristics of the ZnO CantiFET device were recorded at a
drain voltage of 40V (Figure
9.16b).
h e electromechanical characterization was performed by inducing
stress on the cantilever beam using micromanipulator and for dif erent
bending values, output characteristics (Figure
9.17a) and transfer charac-
teristics (Figure
9.17b) were recorded. h e change in current can be attrib-
uted to the combination of piezoresistive and piezoelectric ef ects. h e
strain generated in the semi-conducting i lm leads to a change in the energy
spacing. h is is expected to change the ef ective mass of the charge carriers
causing a change in mobility. h erefore, the change in drain current in the
CantiFET devices, when subjected to strain, is mainly caused by the change
