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where
is the pinch-off voltage. Note
varies with
linearly from 1 at (where to at
(where is small). The validity of (11.105) was questioned in
[103] because it differs from the theoretical results given in [104, 40].
Moreover, the noise power predicated by (11.105) deviates notably
from SPICE simulation when different levels of MOSFET models are
used. It was shown in [40] that under the quasi-static condition, the
power of the thermal noise originating from the drift current in the
channel of a strongly inverted MOSFET transistor is given by [40]
where
Here
and
is the channel conductance when
When the
first-order approximation [105] is used, it is obtained from
It should be noted that (11.107) is only valid for long channel devices.
In [106], the modulation of the channel length and the degradation
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