Environmental Engineering Reference
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Table 4.2 Performance details (V
oc
, J
sc
, FF, and h) of the P3HT/graphene-based photovoltaic
devices without annealing and after annealing at 160 and 210 C for 10 and 20 min under a
simulated AM 1.5G 100 mW illumination. Reproduced with permission [
5
]. Copyright 2009,
Wiley-VCH
SPFGraphene
content (%)
J
sc
(mA/cm
2
)
Annealing
V
oc
(V)
FF
PCE %
Temperature(C)
Time(min)
0
-
-
0.42
0.04
0.27
0.005
2.5
-
-
0.84
0.48
0.23
0.09
5
-
-
0.88
0.364
0.28
0.10
10
-
-
1.10
0.46
0.30
0.15
15
-
-
0.72
0.75
0.25
0.13
2.5
160
10
0.78
2.9
0.24
0.54
5
160
10
0.86
2.7
0.30
0.69
10
160
10
0.72
4.0
0.38
1.10
15
160
10
0.78
2.1
0.21
0.35
2.5
160
20
0.66
4.1
0.25
0.68
5
160
20
0.78
2.6
0.31
0.63
10
160
20
0.88
3.3
0.39
1.10
15
160
20
0.72
1.8
0.27
0.35
2.5
210
10
0.56
2.4
0.25
0.33
5
210
10
0.58
2.7
0.26
0.40
10
210
10
0.40
5.6
0.25
0.57
15
210
10
0.36
3.5
0.35
0.23
2.5
210
20
0.42
2.8
0.23
0.27
5
210
20
0.34
4.7
0.24
0.39
10
210
20
0.48
3.8
0.26
0.47
15
210
20
0.44
1.6
0.26
0.18
ones were observed. The highest PCE 1.10 % was obtained, which was slightly
lower than that for the P3OT-based devices.
In addition, with a high specific surface area for a large interface, high mobility
and tunable band gap, graphene quantum dots (GQDs) exhibit great potential as an
electron acceptor in photovoltaic devices. Li et al. report an electrochemical
approach for the direct preparation of functional GQDs with a uniform size of
3-5 nm, exhibiting a green luminescence and good stability [
51
]. Using these
GODs as the acceptor, devices with the structure of ITO/PEDOT:PSS/
P3HT:GQDs/Al were fabricated. The best performance with a PCE of 1.28 %, J
sc
of 6.33 mA/cm
2
, V
oc
of 0.67 V and FF 0.3 was achieved, which is comparable with
most organic photovoltaic cells with electron acceptors other than fullerenes. Most
recently, Gupta et al. employed aniline functionalized GQDs prepared from GSs by
a hydrothermal approach as the acceptor to fabricate organic solar cells (Fig.
4.7
)
[
52
]. P3HT/ANI-GQD-based hybrid solar cells were fabricated with the device
structure ITO/PEDOT:PSS/P3HT:ANI-GQDs/LiF/Al. Best performance with a
PCE of 1.14 %, V
oc
of 0.61 V, J
sc
of 3.51 mA/cm
2
, and FF of 0.53 were obtained
for 1 wt% ANI-GQD in P3HT.
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