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Figure 16.2 Thickness determination of Au deposition onto a bare silicon wafer using a 10
10 contact mask in two geometries (see insets), using (a) AFM along the diagonal of an array of
100 electrodes and (b) AFM and ellipsometry for a deposition geometry that allowed an average
of 10 fields of identical thickness across the “wedge.” The source temperatures and deposition
times were (a) 1548K, 7200 s and (b) 1623K and 4500 s.
acquisition cards controlled/monitored by a PC as shown in Fig. 16.4. The data were
then visualized with software written in the laboratory. The software allowed simul-
taneous monitoring of the current, or single cyclic voltammograms (CVs), or potential
step experiments at each of the 100 electrodes. This instrumentation has been
described previously [Guerin et al., 2004], but the sensitivities of the current followers
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