Organic Thin-Film Transistor Technology: Properties and Functionality - Analog Organic Electronics - page 28

Insulator

Gate

Substrate Substrate

Pentacene
Precursor

Step 4

Step 1

Source Drain

Insulator

Gate Gate

Substrate Substrate

Step 5

Pentacene

Step 2

Source Drain

Insulator Insulator

Gate Gate

Substrate Substrate

Fig. 2.9 Step-by-step inkjet printed deposition of pentacene thin films (Molesa et al. 2004 )

circuit speed. By applying techniques that overcome the misalignment issue, self-
aligned transistors can be fabricated without a gate-source or gate-drain overlap.
This is typically done by using one of the two materials which are to be aligned as
the mask for the deposition of the other material. Figure 2.10 gives an example that
explains the production of a self-aligned top-gate thin-film transistor (Morosawa et
al. 2011 ).