Digital Signal Processing Reference
In-Depth Information
V
DD
Supply voltage
V
E
Early voltage
V
0
E
Early Voltage of the 4-pin OTFT
V
S,D,G,BG,B
Potential
of
the
source,
drain,
gate,
backgate
or
bulk
node
respectively.
V
SS
Ground voltage
V
T
Threshold voltage
V
0
T
VT of the 4-pin OTFT
V
T,0
Initial threshold voltage
V
T,MOS
VT of the MOS transistor
V
XY(,k)
Potential difference between nodes X and Y (of transistor k)
W
(k)
Transistor width (transistor k)
a
k
Filter parameter of the kth filter
b
Number of bits of the internal ADC and DAC of the DR ADC
d
Distance between metal layers M1 and M2
f
Feedback factor
f
p
pole frequency
f
s
Sampling frequency
g
m(0)
(Initial) transiconductance of a transistor
g
m,k
Transconductance of transistor k
g
sd
Output conductance of a transistor, inverse of r
sd
Botzmann constant. 1.3806503
10
23
k
J/K
k
out
Ratio of output voltage and supply voltage
m
l
Mean value of the mobility
n
Filter order of the DR ADC
n
Subthreshold slope factor
Elementary charge. 1.602176487
10
-19
C
q
r
L
Load resistance
r
sd(,k)
Output resistance of a transistor (transistor k)
r
0(,k)
See r
sd(,k)
t
ox(,t/b)
Oxide/insulator thickness (of the top/bottom insulator)
c
Technology dependent factor
e
0
Electric permittivity of vacuum. 8.85 pF/m
e
r(pvp)
Relative electric permittivity (of PVP)
g
P
Power efficiency
l
Mobility
n
Sensitivity of V
T
to V
SBG
p
Pi. 3.1415926535897932384626433832795028841...
rV
T
Variation of the V
T
r
l(,adj)
Variation of the mobility (of adjacent transistors)
s
LR
Time constant of an RL chain
/
F
Fermi level
/
k
Clock phase k
