Chemistry Reference
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FIGURE 2.3
Schematic representation of the experimental set-up (A). The CLARA
apparatus [31] (right) is connected through a gate valve to the deposition chamber
(left), where the silicon substrate is placed on a 3-axis translating and z-axis rotating
holder. The deposition chamber is equipped with a quartz window through which the
Raman laser can be focused on the sample, and a precision leak valve for gas
injections. The sample holder is equipped with a resistive heater and a thermo-
resistance, for controlled thermal treatment of the sample from room temperature up
to 350
C (B). During the deposition the holder intersects the cluster beam, so that
a circular spot 200 nm thick and with a diameter of 8mm is obtained (C).
beam source. The source is mounted on a UHV manipulator connected to
the first chamber and an electroformed skimmer is placed in front of the
source.
The second chamber is evacuated by a vertically mounted turbomole-
cular pump. It hosts a Maxtek BHS-150 quartz microbalance in order to
monitor the intensity of the cluster beam, and offers the possibility to
connect other UHV systems (such as a load-lock chamber and/or an analy-
sis facility). Cluster deposition on a substrate can be performed directly in
the second chamber.
A 3mm pinhole is placed along the apparatus axis, in order to maintain
a differential vacuum between the second and the third chamber and to
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