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Figure 4. FT-IR spectra of the fibrils at the PI surfaces which were soluble in chloroform after the
PI films were etched with 100% O 2 plasma (a), and 70% O 2 / 30% NF 3 (b).
and -(C=O)-O (289.5 eV) moieties appeared at the surfaces. When the PI film was
etched with 100% O 2 plasma or 70% O 2 / 30% NF 3 plasma, the amount of oxygen
at the surface was increased. When the PI film was etched with 20% O 2 / 80%
NF 3 plasma, peaks representing -CF (290.7 eV) and -CF 2 (292.4 eV) moieties ap-
peared at the surface. Even if the PI film was etched with 70% O 2 / 30% NF 3
plasma, fluorine at the surface was small in quantity. However, when it was
etched with 20% O 2 / 80% NF 3 plasma, the amount of fluorine at the surface was
remarkably increased.
Figure 4 shows the FT-IR spectra of the fibrils at the PI surfaces which were
soluble in chloroform after the PI films were etched with 100% O 2 plasma (a),
and 70% O 2 / 30% NF 3 (b). The peaks representing carbonyl moiety (1740 cm
-1
)
-1
-1
and ether moiety (1250 cm
) appeared. The peak intensity of the
ether moiety in the fibril at the PI surface etched with 30% NF 3 / 70% O 2 plasma
was much larger than that on the surface etched with 100% O 2 plasma.
and 1090 cm
3.2. Analysis of outgassing from etched PI films
Figures 5a, b and c show the QMS spectra of the outgas during etching with
100% O 2 plasma, 70% O 2 / 30% NF 3 plasma and 20% O 2 / 80% NF 3 plasma, re-
spectively. The main products of 100% O 2 plasma etching were H 2 O
+
+
, CO
or
N 2 +
, CO 2 +
+
, O 2 +
+
originated from the inlet oxygen. In addition to
these peaks, the peak representing HF
or N 2 O
and O
+
appeared for etching with 70% O 2 / 30%
NF 3 plasma and 20% O 2 / 80% NF 3 plasma.
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