Nanotechnology’s Wonder Material: Synthesis of Carbon Nanotubes - Hierarchical Nanostructures for Energy Devices - page 38

Table 3.1 Growth eciency of various gases in a molecular jet growth system. Reprinted (adapted) with permission from ref. 6. Copyright
2005 American Chemical Society.

Temp, a 1C MWCNT b SWCNT c VA-SWCNT d Carbon source Formula Carrier gas Deposit Yield

Methane e CH 4 10% H 2 , 88% He 540-740 N

Ethylene e C 2 H 4 10% H 2, 88% He 650 N

Acetylene e C 2 H 2 10% H 2 , 88% He 540-740 Y N Y 10 strong

Propylene e CH 3 CHCH 2 10% H 2 , 88% He 540-740 Y Y Y 0.1 no

Benzene f C 6 H 6 10% H 2 , 90% He 650 N

Xylene f C 6 H 4 (CH 3 ) 2 10% H 2 , 90% He 650 N

Acetone f CH 3 COCH 3 10% H 2 , 90% He 540-740 Y N Y 1 weak

Diethyl ether f C 2 H 5 OC 2 H 5 10% H 2 , 90% He 650 Y N Y 0.5 no

Methanol f CH 3 OH 10% H 2 , 90% He 650 Y N Y 0.5 no

Ethanol f CH 3 CH 2 OH 10% H 2 , 90% He 540-740 Y N Y 0.5 no

Propanol f

CH 3 CH 2 CH 2 OH 10% H 2 , 90% He 650 Y N Y 0.5 no

Carbon monoxide e

CO 10% H 2 , 88% He 540-740 N

a Temperature refers to the temperature of the substrate.
b MWCNT ¼ multiwall carbon nanotube.
c SWCNT ¼ single-wall carbon nanotube.
d VA-SWCNT ¼ vertically aligned SWCNT.
e These experiments were performed in a range of incidence rates from 1.5 10 18 to 5.3 10 18 molecules/(cm 2 s).
f Entrained in carrier gas using a bubbler. The beam composition is determined by the room-temperature vapor pressure.