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In-Depth Information
VLS(Si)
þ
halide CVD
85,86
(InGaN)
Water splitting
(photoanode)
Si(n-type)/InGaN
hierarchical arrays produce
an n-type/n-type hetero-
junction that can be used
as a stable photoanode
with a high surface area for
water splitting PEC cells.
The photocurrent density
with hierarchical Si/InGaN
structures increased by
5 times compared to the
photocurrent density with
InGaN nanowire arrays on
planar Si.
Adapted with permission
from ref.87
(copyright 2012, ACS)
WO
x
/ZnO/CdS/
CdSe
Thermal evaporation
(WO
x
)
þ
hydrothermal
(ZnO)
Hetero
Water splitting
(photoanode)
88
The WO
x
/ZnO/CdSe/CdS
composite structure is
used as a photoanode. ZnO
branches absorb UV
irradiation while narrow
bandgap CdSe/CdS
photosensitizes the visible
light region. The WO
x
core
with a low electrical
resistivity acts as a charge
transport material. The
multicomponent
composite forms a cascade
band structure
89
that
enables e
cient charge
transport with a large
surface area.
Adapted with permission
from ref.88
(copyright 2013, ACS)
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