References - Nonthermal Plasma Chemistry and Physics - page 525

321. M.A. Gilliam, Q. Yu, and H. Yasuda. Plasma polymerization behavior of fluorocarbon
monomers in low-pressure af and rf discharges. Plasma Process. Polym. , 4:165-172,
2007.
322. H. Kobayashia, M. Shena, and A.T. Bella. Effects of reaction conditions on the
plasma polymerization of ethylene. J. Macromol. Sci. Chem. , 8:373-391, 1974.
323. L.G. Christophorou and J.K. Olthoff. FundamentalElectronInteractionswithPlasma
Processing Gases . Kluwer Academic/Plenum Publishers, New York, 2004.
324. M.R. Bruce, C. Ma, and R.A. Bonham. Positive ion pair production by electron
impact dissociative ionization of CF 4 . Chem. Phys. Lett. , 190:285-290, 1992.
325. P.B. Armentrout. Kinetic energy dependence of ion-molecule reactions related to
plasma chemistry. In B. Bederson and H. Walther, eds., Fundamentals of Plasma
Chemistry ,Vo .43of Advances in Atomic, Molecular, and Optical Physics ,
pp. 187-229. Academic Press, San Diego, CA, 2000.
326. M.V.V.S. Rao, S.P. Sharma, and M. Meyyappan. Mass spectrometric measurements in
inductively coupled CF 4 /Ar plasmas. Plasma Sources Sci. Technol. , 11(4):397-406,
2002.
327. C.Q. Jiao, C.A. DeJoseph Jr, A. Garscadden, and S.F. Adams. Gas-phase ion
chemistries in perfluoromethylcyclohexane. Plasma Sources Sci. and Technol. ,
18:025007, 2009.
328. K. Furuya, A. Ide, H. Okumura, and A. Harata. Mass spectrometric investigation and
formation mechanisms of high-mass species in the downstream region of Ar/CF 4 /O 2
plasmas. Phys. Chem. Chem. Phys. , 11:934-942, 2009.
329. P. Favia. Plasma deposition of fluoropolymer films in different glow discharge
regimes. In H. Biederman, ed., Plasma Polymer Films , pp. 25-55. Imperial College
Press, London, U.K., 2004.
330. M.J. Schabel, T.W. Peterson, and A.J. Muscat. Macromolecule formation in low
density CF 4 plasmas: The influence of H 2 . J. Appl. Phys. , 93:1389-1402, 2003.
331. F. Fanelli, F. Fracassi, and R. d'Agostino. Deposition and etching of fluorocarbon
thin films in atmospheric pressure DBDs fed with Ar-CF 4 -H 2 and AR-CF 4 −

O 2

mixtures. Surf. Coat, Technol. , 204:1779-1784, 2010.
332. I.C. Plumb and K.R. Ryan. A model of the chemical processes occurring in
CF 4 /O 2 discharges used in plasma etching. Plasma Chem. Plasma P. , 6(3):205-230,
1986.
333. R. Basner, M. Schmidt, K. Becker, and H. Deutsch. Electron impact ionization of
organic silicon compounds. In B. Bederson and H. Walther, eds., Fundamentals of
Plasma Chemistry ,Vol.43of Advances in Atomic, Molecular, and Optical Physics ,
pp. 147-185. Academic Press, San Diego, CA, 2000.
334. C. Rau and W. Kulisch. Mechanisms of plasma polymerization of various
silico-organic monomers. Thin Solid Films , 249(1):28-37, 1994.
335. M.J. Vasile and G. Smolinsky. Organosilicon films formed by an rf plasma
polymerization process. J. Elecrochem. Soc. , 119(4):451-455, 1972.
336. Y. Catherine, G. Turban, and B. Grolleau. Reaction mechanisms in plasma deposition
of Si x C 1 − x :H films. Thin Solid Films , 76:23-33, 1981.
337. B.V. Tkachuk, V.V. Bushin, V.M. Kolotyrkin, and N.P. Smetankina. Polymerization
of organosilicon compounds on metal surface caused by glow discharge. Vysokomol.
Soedin. A , 9A(9):2018-2024, 1967.
338. S.P. Mukherjee and P.E. Evans. The deposition of thin films by the decomposition
of tetra-ethoxy silane in a radio frequency glow discharge. Thin Solid Films ,
14:105-118, 1972.