References - Nonthermal Plasma Chemistry and Physics - page 484

15. C. Hopf, T. Schwarz-Selinger, W. Jacob, and A. von Keudell. J. Appl. Phys. , 87:2719,
2000.
16. J. Perrin, Y. Takeda, N. Hirano, Y. Takeuchi, and A. Matsuda. Surf.Sci. , 210:114, 1989.
17. A. Matsuda, K. Nomoto, Y. Takeuchi, A. Suzuki, Y. Yuuki, and J. Perrin. Surf. Sci. ,
227:50, 1990.
18. D.A. Doughty, J.R. Doyle, G.H. Lin, and A. Gallagher. J. Appl. Phys. , 67:6220,
1990.
19. A. Nuruddin, J.R. Doyle, and J.R. Abelson. J. Appl. Phys. , 76:3123, 1994.
20. M. Shiratani, J. Jolly, H. Videlot, and J. Perrin. Jpn. J. Appl. Phys. , 36:4752, 1997.
21. P. Pecher and W. Jacob. Appl. Phys. Lett. , 73:31, 1998.
22. P. Pecher. PhD thesis, Universität Bayreuth, Bayreuth, Germany, 1997.
23. R. Street. Hydrogenated Amorphous Silicon , 1st edn. Cambridge University Press,
Cambridge, U.K., 1992.
24. K. Tanaka and A. Matsuda. Mater. Sci. Rep. , 2:139, 1987.
25. J.R. Doyle, D.A. Doughty, and A. Gallagher. J. Appl. Phys. , 71:4771, 1992.
26. R. Robertson and A. Gallagher. J. Appl. Phys. , 59:3402, 1986.
27. J. Perrin. J. Non-Cryst. Solids , 137-138:639, 1991.
28. A. Gallagher. Mat. Res. Soc. Proc. , 70:3, 1986.
29. K. Maeda, A. Kuroe, and I. Umezu. Phys. Rev. B , 51:10635, 1995.
30. Y. Toyoshima, K. Arai, A. Matsuda, and K. Tanaka. Appl. Phys. Lett. , 57:1028, 1990.
31. Y. Toyoshima, K. Arai, A. Matsuda, and K. Tanaka. Appl. Phys. Lett. , 56:1540, 1990.
32. S. Yamasaki, T. Umeda, J. Isoya, and K. Tanaka. Appl. Phys. Lett. , 70:1137, 1997.
33. T. Ohira, T. Adachi, Y. Takeuchi, and M. Murata. Phys. Rev. B , 52:8283, 1995.
34. A. von Keudell and J.R. Abelson. Phys. Rev. B , 59:5791, 1999.
35. E. Aydil, S. Agarwal, M. Valipa, B. Hoex, M. van de Sanden, and D. Maroudas. Surf.
Sci. , 598:35, 2005.
36. W. Kessels, Private communication. 2006.
37. J. Abelson. Appl. Phys. A , 56:493, 1993.
38. J. Thornton. J. Vac. Sci. Technol. , 4:3059, 1986. References 127.
39. J. Thornton and A. Penfold. In J. Vossen and W. Kern, eds., Thin Film Processes .
Academic Press, New York, 1978.
40. Y. Lifshitz, S.R. Kasi, J.W. Rabalais, and W. Eckstein. Phys. Rev. B , 41:10468, 1990.
41. J. Robertson. Diam. Relat. Mater. , 2:984, 1993.
42. A. von Keudell, W. Möller, and R. Hytry. Appl. Phys. Lett. , 62:937, 1993.
43. A. von Keudell and W. Möller. J. Appl. Phys. , 75:7718, 1994.
44. W. Möller, W. Fukarek, K. Lange, A. von Keudell, and W. Jacob. Jpn. J. Appl. Phys. ,
34:2163, 1995.
45. W. Eckstein and J.P. Biersack. Z. Phys. , B63:471, 1986.
46. H. Deutsch, H. Kersten, and A. Rutscher. Contrib. Plasma Phys. , 29:263, 1989.
47. R.A. Haefer. Oberflächen- und Dünnschichttechnologie . Springer, Berlin, Germany,
1991.
48. M. Balooch, D.R. Olander, and W.J. Siekhaus. J. Vac. Sci. Technol. B , 4:794, 1986.
49. H. Kersten, H. Deutsch, H. Steffen, G.M.W. Kroesen, and R. Hippler. Vacuum ,
63:385, 2001.
50. A. Durandet, O. Joubert, J. Pelletier, and M. Pichot. J. Appl. Phys. , 67:3862, 1990.
51. H. Kersten, H. Deutsch, and J.F. Behnke. Vacuum , 48:123, 1997.
52. H. Schmoranzer and R. Zietz. Observation of selectively excited continuous vacuum
ultraviolet emission in molecular hydrogen. Phys. Rev. A , 18:1472-1475, 1978.