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HMDSO dissociation is reported by charge exchange reactions with Ar + ions
Ar +
CH 3 ) 2 (
+ (
CH 3 ) 3 SiOSi
(
CH 3 ) 3 −→ (
CH 3 ) 3 SiOSi
(
147
) +
CH 3 +
Ar [349]
Si 2 OC 4 H 11 (
also
−→
131
) + (
2C,7H
) +
Ar
SiC 3 H 9 (
−→
73
) + (
Si,O,3C,9H
) +
Ar [345].
Ion-molecule reactions between HMDSO fragment ions and HMDSO molecules
could be identified, which lead to ions with higher mass (first step of formation of
oligomers), e.g., [345], see also [347]
Si 2 OC 5 H 15 (
Si 3 O 2 C 7 H 21 (
147
) + (
CH 3 ) 3 SiOSi
(
CH 3 ) 3 −→
221
) + (
Si,4C,12H
)
,
Si 4 O 2 C 11 H 33 (
−→
309
)
.
Besides the fragment ions of HMDSO, ions with mass numbers 163, 207, 221,
281, 295, 309, 353, 369, and 383 were observed in HMDSO RF discharges. ToF
SIMS spectra [317,318] and pyrolysis spectra measured by a high-resolution double
focusing mass spectrometer [347] of the plasma deposit show siloxane ions with mass
numbers up to 295, (CH 3 ) 3 Si (OSi(CH 3 ) 2 ) 3 . Deposit formation will be essentially
determined by ion molecule reactions.
Solubility of plasma polymers decrease with increasing energy input. Investiga-
tion using the positive column of dc glow discharge feeded by a mixture Ar/HMDSO
show decreasing solubility in organic solvents of the deposit in relation to the
residence time of the monomer in the active plasma (see Figure 8.51 [350]).
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
10
1
1
0,1
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
t res
[s]
FIGURE 8.51 Relative solubility R soluble / R insoluble of HMDSO films deposited in the positive
column of an Ar HMDSO dc discharge (HMDSO-flow 0.9 · 10 3 mol/h) for discharge currents
of 30 mA ( ) and 40 mA ( ).
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