Silicon/Electrolyte Interface - Electrochemistry of Silicon and Its Oxide - page 56

dip in HF solutions. 574,577,622,635,663 Predominant termination of a flat (111) surface
is also reported. 577,820 The silicon atoms on steps, which are terminated by di- and tri-
hydrogen, are preferentially attacked, while the atoms, which are terminated by mono-
hydrogen, are not directly attacked. 895 Surface roughening of (111) planes is generally
accompanied by the formation of di- and trihydrides. 446,621
Hydrogen termination of the silicon surface appears to occur over the whole pH
range from acidic to basic whenever the surface is not covered with an oxide film. The
silicon surface is found to be covered with hydrogen in alkaline solution even under