Chemistry Reference
In-Depth Information
1100. O. Nast, S. Rauscher, H. Jungblut, and H.-J. Lewerenz, Micromorphology changes of silicon oxide
on Si(111) during current oscillations: A comparative in situ AFM and FTIR study,
J. Electroanal.
Chem.
422
, 169, 1998.
1101. W.-C. Moon, T. Yoshinobu, and H. Iwasaki, Fabrication of nanopit arrays on Si(111),
Jpn. J. Appl.
Phys.
38
, 483, 1999.
1102. V. Lehmann, F. Hofmann, F. Möller, and U. Grüning, Resistivity of porous silicon: A surface effect,
Thin Solid Films
255
,
20, 1995.
1103. M. Schoisswohl, H. J. von Bardeleben, V. Morazzani, A. Grosman, C. Ortega, St. Frohnhoff, M. G.
Berger, and H. Münder, Analysis of the surface structure in porous Si,
Thin Solid Films
255
, 123,
1995.
1104. S. C. Bayliss, D. A. Hutt, Q. Zhang, P. Harris, N. J. Phillips, and A. Smith, Structural study of porous
silicon,
Thin Solid Films
255
, 128, 1995.
1105. M. Bertolotti, F. Carassiti, E. Fazio, Ferrari, S. La Monica, S. Lazarouk, G. Liakhou, G. Maiello, E.
Proverbio, and L. Schirone, Porous silicon obtained by anodization in the transition regime,
Thin Solid
Films
253
,
152, 1995.
1106. W. Theiá, M. Wernke, and V. Offermann, Depth profiling of porous silicon layers by attenuated total
reflection spectroscopy,
Thin Solid Films
255
,
181, 1995.
1107. U. Gösele and V. Lehmann, Light-emitting porous silicon,
Mater. Chem. Phys.
40
, 253, 1995.
1108. P. Allongue, C. H. de Villeneuve, L. Pinsard, and M. C. Bernard, Evidence for hydrogen incorpora-
tion during porous silicon formation,
Appl. Phys. Lett.
67
(7), 941, 1995.
1109. J. Kasparian, M. Elwenspoek, and P. Allongue, Digital computation and in situ STM approach of
silicon anisotropic etching,
Surf. Sci.
388
, 50, 1997.
1110. A. Fidélis, F. Ozanam, and J.-N. Chazalviel, Fully methylated, atomically flat (111) silicon surface,
Surf. Sci.
444
, L7, 2000.
1111. P. D. J. Calcott, The mechanism of light emission from porous silicon: Where are we 7 years on?
Mater. Sci. Eng.
B51
, 132, 1998.
1112. P. Allongue, C. H. de Villeneuve, J. Pinson, F. Ozanam, J.-N. Chazalviel, and X. Wallart, Organic
monolayers on Si(111) by electrochemical method,
Electrochim. Acta
43
(19-20), 2791, 1998.
1113. M. C. dos Santos and O. Teschke, Aligned pipe arrays formation by silicon anodic etching,
J. Vac.
Sci. Technol.
B16
(4), 2105, 1998.
1114. P. Allongue, V. Kieling, and H. Gerischer, Atomic structure of Si surfaces etched in Triton/NaOH
solutions,
J
.
Phys. Chem.
99
, 9472, 1995.
1115. C. H. de Villeneuve, J. Pinson, M. C. Bernard, and P. Allongue, Electrochemical formation of close-
packed phenyl layers on Si(111),
J. Phys. Chem.
B101
, 2415, 1997.
1116. H. J. Lewerenz, Spatial and temporal oscillation at Si(111) electrodes in aqueous fluoride-containing
solution,
J. Phys. Chem.
B101
, 2421, 1997.
1117. V. Lehmann, W. Hönlein, H. Reisinge, A. Spitzer, H. Wendt, and J. Wilier, A novel capacitor tech-
nology based on porous silicon,
Thin Solid Films
276
, 138, 1996.
1118. L. M. Peter, D. J. Riley, and R. I. Wielgosz, An in-situ method of monitoring the surface area of porous
silicon,
Thin Solid Films
276
, 61, 1996.
1119. M. Binder, T. Edelmann, T. H. Metzger, G. Mauckner, G. Goerigk, and J. Peisl, Bimodal size distri-
bution in p—porous silicon studied by small angle X-ray scattering,
Thin Solid Films
276
, 65, 1996.
1120. D. Buttard, D. Bellet, and T. Baumbach, X-ray diffraction investigation of porous silicon superlattices,
Thin Solid Films
276
, 69, 1996.
1121. J. L. Cantin, M. Schoisswohl, A. Grosman, S. Lebib, C. Ortega, H. J. von Bardeleben, É. Vazsonyi,
and porous silicon: Surface structural
transformations and oxide formation,
Thin Solid Films
276
, 76, 1996.
1122. M. Schoisswohl, J. L. Cantin, M. Chamarro, H. J. von Bardeleben, T. Morgenstern, E. Bugiel, W.
Kissinger, and R. C. Andreu, Defects and visible photoluminescence in porous
G. Jalsovszky, and J. Erostyak, Anodic oxidation of
Thin Solid
Films
276
, 92, 1996.
1123. J. Rappich and H. J. Lewerenz, Photo- and Potential-controlled nanoporous silicon formation on
n-Si(111): An in-situ FTIR investigation,
Thin Solid Films
276
, 25, 1996.
1124. M. Thönissen, M. G. Berger, R. Arens-Fischer, O. Glüger, and H. Lüth, Illumination-assisted forma-
tion of porous silicon,
Thin Solid Films
276
, 21, 1996.
