Chemistry Reference
In-Depth Information
1019. D. F. Weirauch, Correlation of the anisotropic etching of single-crystal silicon sphere and wafers,
J. Appl. Phys.
46
, 1478, 1975.
1020. W. C. Dash, Copper precipitation on dislocation in silicon,
J. Appl. Phys.
27
, 1193, 1956.
1021. T. L. Chu and J. R. Gavaler, Dissolution of silicon and junction delineation in silicon by the
system,
Electrochim. Acta
10
, 1141, 1965.
1022. K. Sangwal,
Etching of Crystals,
Elsevier Science, New York, 1987.
1023. H. Seiter, Integrational etching methods, in
Semiconductor Silicon 1977,
H. R. Huff and E. Sirtl (eds.),
p. 187, Electrochemical Society, Pennington, 1977.
1024. W. K. Zwicker and S. K. Kurtz, Anisotropic etching of silicon using electrochemical displacement
reactions, in
Semiconductor Silicon,
H. R. Huff and R. R. Burgess (eds.), p. 315, Electrochemical
Society, Pennington, 1973.
1025. H. Muraoka, T. Ohashi, and Y. Sumitomo, Controlled preferential etching technology, in
Semiconductor
Silicon,
H. R. Huff and R. R. Burgess (eds.), p. 327, Electrochemical Society, Pennington, 1973.
B. Price, Anisotropic etching of silicon with alcohol, in
Semiconductor
Silicon,
H. R. Huff and R. R. Burgess (eds.), p. 339, Electrochemical Society, Pennington, 1973.
1027. V. Lehmann and S. Ronnebeck, The physics of macropore formation in low-doped p-type silicon,
J. Electrochem. Soc.
146
, 2968, 1999.
1028. R. P. Chang, Plasma oxidation of semiconductor and metal surfaces, in
Passivity of Metals and
Semiconductors,
M. Froment (ed.), p. 437, Elsevier, Amsterdam, 1983.
1029. B. Agius, M. Froment, and S. R. Rochet, Oxygen transport studied by
18
O labeling in thin thermal
silicon oxide films in connection with their structural characteristics, in
Passivity of Metals and
Semiconductors,
M. Froment (ed.), p. 453, Elsevier, Amsterdam, 1983.
1030. T. Sugano, Passivation of semiconductors,
Solid-State Electron.
33
, 21, 1990.
1031. A. Namiki, XPS study on early stages of oxidation by atomic oxygen in silicon surfaces,
Solid-State
Electron.
33
, 107, 1990.
1032. Y. Nagasawa and H. Ishida, Backbond oxidation of hydrogen passivated silicon surface,
Solid-State
Electron.
33
, 129, 1990.
1033. M. Seo, K. Aotsuka, and N. Sato, Study on electroluminescence from Si during anodic oxidation,
Solid-State Electron.
33
, 167, 1990.
1034. K. E. Heusler, Fundamental aspects of the passivation of metals and semiconductors,
Mater. Sci.
Forum
185-188
, 9, 1995.
1035. H. Flietner, Passivity and electronic properties of the silicon/silicon dioxide interface,
Mater. Sci.
Forum
185-188
, 73, 1995.
1036. J. Rappich and H. J. Lewerenz, Electrochemical and electronic passivation by hydrogenation of
n-Si(111),
Mater. Sci. Forum
185
, 83, 1995.
1037. S. Scharf, M. Schmidt, and D. Braunig, Influence of tunneling on trapping kinetics in thin layers,
Mater. Sci. Forum
185-188
, 91, 1995.
1038. V. Uritsky, Role of electron/hole processes in the initial stage of silicon anodization,
Mater. Sci. Forum
185-188
, 115, 1995.
1039. O. Najmi, I. Montero, L. Galan, and J. M. Albella, Study of the silicon oxide transportation during
the breakdown process,
Mater. Sci. Forum.
185-188
, 535, 1995.
1040. N. Fukuchi, Future outlooks for technology development in new materials business, Nippon Steel
Technology Report No. 73, April 1997.
1041. C. M. Hu, Silicon nanoelectronics for the 21st century,
Nanotechnology
10
, 113, 1999.
1042. G. Bub, M. I. Schoning, H. Luth, and J. W. Schultze, Modifications and characterization of a silicon-
based microelectronic array,
Electrochim. Acta
44
, 3899, 1999.
1043. N. Takano, N. Hosoda, T. Yamada, and T. Osaka, Effect of oxidized silicon surface on chemical depo-
sition of nickel on n-type silicon wafer,
Electrochim. Acta
44
, 3743, 1999.
1044. K. Morisawa, M. Ishida, S. Yae, and Y. Nakato, Electrochemical metal deposition on atomically nearly-
flat silicon surfaces accompanied by nano-hole formation,
Electrochim. Acta
44
, 3725, 1999.
1045. M. Grundner and H. Jacob, Investigation on hydrophilic and hydrophobic silicon (100) wafer surfaces
by X-ray photoelectron and high-resolution electron energy loss-spectroscopy,
Appl. Phys.
A39
, 73,
1986.
1046. K. Honda, A. Ohsawa, and N. Toyokura, Silicon surface roughness—structural observation by reflec-
tion electron microscopy,
Appl. Phys. Lett.
48
, 779, 1986.
1026. J.
