Chemistry Reference
In-Depth Information
857. B. Hamilton, Porous silicon,
Semicond. Sci. Technol.
10
, 1187, 1995.
858. Y. Kang and J. Jorne, Photoelectrochemical dissolution of n-type silicon,
Electrochim. Acta
43
(16-17),
2389, 1998.
859. H. You, Z. Nagy, and K. Huang, X-ray scattering study of porous silicon growth during anodic dis-
solution,
Phys. Rev. Lett.
78
(7), 1367, 1997.
860. M. Aggour, M. Diersig, and H. J. Lewerenz, Interface Condition of n-Si(111) during photocurrent
oscillations in solutions,
J. Electroanal. Chem.
383
, 67, 1995.
861. H. H. Hassan, B. Fotouhi, J.-L. Sculfort, S. S. Abdel-Rehiem, M. Etman, F. Oxanam, and J.-N.
Chazalviel, Effect of alkali-metal and some quaternary-ammonium cations on the anodic dissolution
of p-Si in fluoride media,
J
.
Electroanal. Chem.
407
, 105, 1996.
862. D. Dini, S. Cattarin, and F. Decker, Probe beam deflection study of p-Si electrodissolution in acidic
fluoride medium in the oscillating regimes,
J. Electroanal. Chem.
446
, 7, 1998.
863. M. T. Kelly, J. K. M. Chun, and A. B. Bocarsly, High efficiency chemical etchant for the formation
of luminescent porous silicon,
Appl. Phys. Lett.
64
(13), 1693, 1994.
864. R. R. Kunz, P. M. Nitishin, H. R. Clark, M. Rothschild, and B. Ahern, Observation of a
nanocrystalline-to-amorphous phase transition in luminescent porous silicon,
Appl. Phys. Lett.
67
(12), 1766, 1995.
865. A. J. Steckl, J. Xu, H. C. Mogul, and S. Mogren, Doping-induced selective area photoluminescence
in porous silicon,
Appl. Phys. Lett.
62
(16), 1982, 1993.
866. J. Rappich, M. Aggour, S. Rauscher, H. J. Lewerenz, and H. Jungblut, Electrochemical surface con-
ditioning of n-Si(111),
Surf. Sci.
335
, 160, 1995.
867. A. J. Nozik, Photoelectrochemistry: Applications to solar energy conversion,
Annu Rev. Phys. Chem.
29
, 189, 1978.
868. G. Bomchil, A. Halimaoui, I. Sagnes, P. A. Badoz, I. Berbezier, P. Perret, B. Lambert, G. Vincent, L.
Garchery, and J. L. Regolini, Porous silicon: Material properties, visible photo- and electrolumines-
cence,
Appl. Surf. Sci.
65/66
, 394, 1993.
869. R. M. Candea, M. Kastner, R. Goodman, and N. Hickok, Photoelectrolysis of water: Si in salt water,
J. Appl. Phys.
47
(6), 2724, 1976.
870. S. M. Prokes, Surface and optical properties of porous silicon,
J. Mater. Res.
11
(2), 305, 1996.
871. W. Kern, Chemical etching of silicon, germanium, gallium arsenide, and gallium phosphide,
RCA Rev.
39
, 278, 1978.
872. W. Kern, Wet-chemical etching of
and PSG films, and an etching-induced defect in glass-
passivated integrated circuits,
RCA Rev.
47
, 186, 1986.
873. H. Gerischer and M. Lubke, The electrochemical behaviour of n-type silicon (111)-surfaces in fluo-
ride containing aqueous electrolytes,
Ber. Bunsenges. Phys. Chem.
91
, 394, 1987.
874. H. Gerischer and M. Lubke, Electrolytic growth and dissolution of oxide layers on silicon in aqueous
solutions of fluorides,
Ber. Bunsenges. Phys. Chem.
92
, 576, 1988.
875. Y. Nakato, S. Tonomura, and H. Tsubomura, The catalytic effect of electrodeposited metals on the
photo-reduction of water at p-type semiconductors,
Ber. Bunsenges.
80
(12), 1289, 1976.
876. R. Memming and F. Mollers, Two-step redox processes with quinones at semiconductor electrodes,
Ber. Bunsenges.
76
(7), 609, 1972.
877. N. S. Lewis, A. B. Bocarsly, and M. S. Wrighton, Heterogeneous electron transfer at designed semi-
conductor/liquid interfaces. Rate of reduction of surface-confined ferricenium centers by solution
reagents,
J. Phys. Chem.
84
, 2033, 1980.
878. J. A. Bruce, T. Murahashl, and M. S. Wrighton, Synthesis and characterization of structured interfaces
for hydrogen generation. Study of an N, N
'
-dialkyl-4, 4
'
-bipyridinium redox polymer/palladium cat-
alyst system,
J. Phys. Chem.
86
, 1552, 1982.
879. P. Leempoel, M. Castro-Acuna, F. F. Fan, and A. J. Bard, Semiconductor electrodes. 43. The effect of
light intensity and iodine doping on the stabilization of n-silicon by phthalocyanine films,
J. Phys.
Chem.
86
, 1396, 1982.
880. K. W. Frese, Jr., Simple method for estimating energy levels of solids,
J. Vac. Sci. Technol
16
(4), 1042,
1979.
881. B. Semmens and A. B. Meggy, The reaction of kaolin with fluorides,
J. Appl. Chem.
16
, 122, 1966.
882. D. L. DuBois, Modification of silicon and carbon electrodes with methacrylamide polymers contain-
ing covalently attached molybdenum dinitrogen complexes,
Inorg. Chem.
23
, 2047, 1984.
