Chemistry Reference
In-Depth Information
551. J.-N. Chazalviel and T. B. Truong, A quantitative study of Fermi level pinning at a semiconductor-
electrolyte interface,
J. Electroanal. Chem.
114
, 299, 1980.
552. J. A. Bruce and M. S. Wrighton, Study of textured n-type silicon photoanodes: electron microscopy,
auger and electroanalytical characterization of chemically derivatized surfaces,
J. Electroanal. Chem,
122
, 93, 1981.
553. A. B. Bocarsly, E. G. Walton, M. G. Bradley, and M. S. Wrighton, Two-electron oxidations at illu-
minated n-type semiconducting silicon electrodes,
J. Electroanal. Chem,
100
, 283, 1979.
554. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, Growth of native oxide on a silicon
surface,
J. Appl. Phys.
68
(3), 1272, 1990.
555. D. Graf, M, Grundner, and R. Schulz, Oxidation of HF-treated Si wafer surfaces in air,
J. Appl. Phys.
68
(10), 5155, 1990.
556. S. Bengtsson and L. Engstrom, Interface charge control of directly bonded silicon structures,
J. Appl.
Phys.
66
(3), 1231, 1989.
557. E. D. Palik, O. J. Glembocki, I. Heard, Jr., P. S. Burno, and L. Tenerz, Etching roughness for (100)
silicon surfaces in aqueous KOH,
J. Appl. Phys.
70
(6), 3291, 1991.
558. M. P. Valignat, M. Voue, G. Oshanin, and A. M. Cazabat, Structure and dynamics of thin liquid films
on solid substrates,
Colloids Surf.
A154
, 25, 1999.
559. M. Fuji, T. Takei, T. Watanabe, and M. Chikazawa, Wettability of fine silica powder surfaces modi-
fied with several normal alcohols,
Colloids Surf.
A154
, 13, 1999.
560. D. Graf, M. Grundner, D. Muhlhoff, and M. Dellith, Influence of Cu on the native oxide growth of
Si,
J
.
Appl. Phys.
69
(11), 7620, 1991.
561. R. M. Candea, M. Kastner, R. Goodman, and N. Hickok, Photoelectrolysis of water: Si in salt water,
J. Appl. Phys.
47
(6), 2724, 1976.
562. B. E. Deal and A. S. Grove, General relationship for the thermal oxidation of silicon,
J. Appl. Phys.
36
(12), 3770, 1965.
563. T. Takahagi, I. Nagai, A. Ishitani, and H. Kuroda, The formation of hydrogen passivated silicon single-
crystal surfaces using ultraviolet cleaning and HF etching,
J. Appl. Phys.
64
(7), 3516, 1988.
564. K.-H. Li, C. Tsai, S. Shih, T. Hsu, D. L. Kwong, and J. C. Campbell, The photoluminescence spectra
of porous silicon boiled in water,
J. Appl. Phys.
72
(8), 3816, 1992.
565. S. M. Prokes, Study of the luminescence mechanism in porous silicon structures,
J. Appl. Phys.
73
(1),
40, 1993.
566. I. M. Young, M. I. J. Beale, and J. D. Benjamin, X-ray double crystal diffraction study of porous
silicon,
Appl. Phys. Lett.
46
, 1134, 1985.
567. D. R. Lilliongton and W. G. Townsend, Effects of interfacial oxide layers on the performance of silicon
Schottky-barrier solar cells,
Appl. Phys. Lett.
28
(2), 97, 1976.
568. G. W. Cogan, C. M. Gronet, and J. F. Gibbons, 7.2% efficient polycrystalline silicon photoelectrode,
Appl Phys. Lett.
44
(5), 539, 1984.
569. M. L. Rosenbluth, C. M. Lieber, and N. S. Lewis, 630-mV open circuit voltage, 12% efficient n-Si
liquid junction,
Appl. Phys. Lett.
45
(4), 423, 1984.
570. R. J. von Gutfeld and R. T. Hodgson, Laser enhanced etching in KOH,
Appl Phys. Lett.
40
(4), 352, 1982.
571. C. H. Seager and D. S. Ginley, Passivation of grain boundaries in polycrystalline silicon,
Appl. Phys.
Lett.
34
(5), 337, 1979.
572. M. I. J. Beale, N. G. Chew, M. J. Uren, A. G. Cullis, and J. D. Benjamin, Microstructure and forma-
tion mechanism of porous silicon,
Appl. Phys. Lett.
46
(1), 1095, 1985.
573. J. F. Gibbons, G. W. Cogan, C. M. Gronet, and N. S. Lewis, A 14% efficient nonaqueous semicon-
ductor/liquid junction solar cell,
Appl Phys. Lett.
45
(10), 1095, 1984.
574. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Ideal hydrogen termination of the
Si(111) surface,
Appl. Phys. Lett.
56
(7), 656, 1990.
575. S.-F. Chuang, S. D. Collins, and R. L. Smith, Porous silicon microstructure as studied by transmis-
sion electron microscopy,
Appl. Phys. Lett.
55
(15), 1540, 1989.
576. F. Subrahmanyan, H. Z. Massoud, and R. B. Fair, Experimental characterization of two-dimensional
dopant profiles in silicon using chemical staining,
Appl. Phys. Lett.
52
(25), 2145, 1988.
577. V. A. Burrows, Y. J.Chabal, G. S. Higashi, K. Raghavachari, and S. B. Christman, Infrared spec-
troscopy of Si (111) surfaces after HF treatment: Hydrogen termination and surface morphology,
Appl.
Phys. Lett.
53
(11), 998, 1988.
