Chemistry Reference
In-Depth Information
179. R. P. Holmstrom and J. Y. Chi, Complete dielectric isolation by highly selective and self-stopping
formation of oxidized porous silicon,
Appl. Phys. Lett.
42
, 386, 1983.
180. W. Ranke and Y. R. Xing, Orientation dependent adsorption on a cylindrical silicon crystal,
Surf. Sci.
157
, 339, 1985.
181. Y. Arita, K. Kuranari, and Y. Sunohara, Thermal behaviour of porous silicon,
Jpn. J. Appl. Phy.
127
,
1655, 1976.
182. R. Memming, Surface recombination at higher injection levels,
Surf. Sci.
1
,
88, 1964.
183. K. Moslavac and B. Lovrecek, The anodic passivation on silicon single crystals,
Electrochim, Acta
14
, 373, 1969.
184. D. L. Kendall, On the etching of very narrow grooves in silicon,
Appl. Phys. Lett.
26
, 195, 1975.
185. S. S. Tsao, D. R. Mayers, T. R. Guilinger, and M. J. Kelly, Selective porous formation in buried
p
+
layers,
J. Appl. Phys.
62
,
4182, 1987.
186. G. Mende, Detection of mobile ion during the anodic oxidation of silicon,
J. Electrochem. Soc.
127
,
2085, 1980.
187. N. F. Mott, Transport of oxygen and water in oxide layer, in
Passivity of Metals and Semiconductors,
M. Froment (ed.), p. 1, Elsevier Science, Amsterdam, 1983.
188. W. Z. Zhou, J. M. Thomas, D. S. Shephard, B. F. G. Johnson, D. Ozkaya, T. Maschmeyer, R. G.
Bell, and Q. F. Ge, Ordering of ruthenium cluster carbonyls in mesoporous silica,
Science
280
, 705,
1998.
189. A. Prasad, S. Balakrishnan, S. K. Jain, and G. C. Jain, Porous silicon oxide anti-reflection coating for
solar cells,
J. Electrochem. Soc.
129
, 587, 1982.
190. S. S. Tsao, Porous silicon techniques for SOI structures,
IEEE Circuits Device,
3, November 1987.
191. R. C. Kainthla, B. Zelenay, and J. O. Bockris, Protection of n-Si photoanode against photocorrosion
in photoelectrochemical cell for water electrolysis,
J. Electrochem. Soc.
133
, 248, 1986.
192. R. L. Smith, B. Kloeck, N. DeRooij, and S. D. Collins, The potential dependence of silicon anisotropic
etching in KOH at 60°C,
J. Electroanal. Chem. Interfacial Electrochem.
238
, 103, 1987.
193. S. S. Tsao, T. R. Guilinger, M. J. Kelly, and P. J. Clews, Multilevel porous silicon formation,
J. Elec-
trochem. Soc.
136
, 586, 1989.
194. F. Gaspard, A. Bsiesy, M. Ligeon, F. Muller, and R. Herino, Charge exchange mechanism responsi-
ble for p-type silicon dissolution during porous silicon formation,
J. Electrochem. Soc.
136
, 3043,
1989.
195. J. E. A. M. van den Meerakker and J. H. C. van Vegchel, Silicon etching in
solutions. I.
High regions,
J. Electrochem. Soc.
136
, 1949, 1989.
196. J. E. A. M. van den Meerakker and J. H. C. van Vegchel, Silicon etching in
solutions. II.
Low regions,
J. Electrochem. Soc.
136
, 1954, 1989.
197. H. Doushita, M. Matsumura, and H. Tsubomura, Anomalous high photocurrents observed in p-type
silicon electrodes having high electric resistances,
J
.
Electrochem. Soc.
136
, 84, 1989.
198. J. Ruzyllo, A. M. Hoff, D. C. Frystak, and S. D. Hossain, Electrical evaluation of wet and dry clean-
ing procedures for silicon device fabrication,
J. Electrochem. Soc.
136
, 1474, 1989.
199. M. T. Spilter and J. D. Cary, Photoelectrochemical analysis of doped hydrogenated amorphous silicon,
J. Electrochem. Soc.
136
, 2295, 1989.
200. G. Gould and E. A. Irene, An in situ ellipsometry study of aqueous
treatment of silicon,
J. Electrochem. Soc.
136
, 1108, 1989.
201. K. Ghowsi and R. J. Gale, Theoretical model of the anodic oxidation growth kinetics of Si at constant
voltage,
J
.
Electrochem. Soc.
136
, 867, 1989.
202. T. Odenweller, On the theory of the semiconductor/electrolyte-interface (I),
J. Electrochem. Soc.
137
,
2457, 1990.
203. W. Kern, The evolution of silicon wafer cleaning technology,
J. Electrochem. Soc.
137
, 1887, 1990.
204. T. C. Chandler, MEMC etch—A chromium trioxide-free etchant for delineating dislocations and slip
in silicon,
J. Electrochem. Soc.
137
, 944, 1990.
205. Y. P. Xu and R. S. Huang, Anodic dissolution and passivation of silicon in hydrazine,
J. Electrochem.
Soc.
137
, 948, 1990.
206. H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgartel, Anisotropic etching of crystalline silicon in
alkaline solutions. I. Orientation dependence and behavior of passivation layer,
J. Electrochem. Soc.
137
, 3612, 1990.
