Chemistry Reference
In-Depth Information
128. M. Warntjes, C. Vieillard, F. Ozanam, and J. N. Chazalviel, Electrochemical methoxylation of porous
silicon surface,
J
.
Electrochem. Soc.
142
, 4139, 1995.
129. L. C. Chen, M. Chen, C. Lien, and C. C. Wan, The band model and the etching mechanism of silicon
in aqueous KOH,
J. Electrochem. Soc.
142
, 170, 1995.
130. Y. Ogata, H. Niki, T. Satsuo, T. Sakka, and M. Iwasaki, Hydrogen in porous silicon: Vibrational analy-
sis of species,
J. Electrochem. Soc.
142
, 195, 1995.
131. S. G. S. Filho, C. M. Hasenack, L. C. Salay, and P. Mertens, A less critical procedure for silicon wafer
using diluted HF dip and boiling in isopropyl alcohol as final steps,
J. Electrochem. Soc.
142
, 902,
1995.
132. S. Yao, J. Hesketh, and A. T. Macrander, Etching high aspect ratio (100) silicon grooves in CsOH,
J.
Electrochem. Soc.
142
, L23, 1995.
133. St. Frohnhoff, M. Marso, M. G. Berger, M. Thonossen, H. Luth, and H. Munder, An extended quantum
model for porous silicon formation,
J. Electrochem. Soc.
142
, 615, 1995.
134. J. S. Jeon, S. Raghavan, and R. P. Sperline, Behavior of polyethylene oxide based nonionic surfac-
tants in silicon processing using alkaline solutions,
J. Electrochem. Soc.
142
, 621, 1995.
135. K. K. Yoneshige, H. G. Parks, S. Raghavan, J. B. Hiskey, and P. J. Resnick, Deposition of copper
from a buffered oxide etchant onto silicon wafers,
J. Electrochem. Soc.
142
, 671, 1995.
136. M. M. Rieger and P. A. Kahl, Mechanism of (111) silicon etching in HF-acetonitrile,
J. Electrochem.
Soc.
142
, 1490, 1995.
137. Y. Ogata, H. Niki, T. Sakka, and M. Iwasaki, Oxidation of porous silicon under water vapor environ-
ment,
J. Electrochem. Soc.
142
, 1595, 1995.
138. C. Spinella, V. Raineri, and S. U. Campisano, Selective etching of B-doped silicon: Mechanisms
and two-dimensional delineation of concentration profiles,
J. Electrochem. Soc.
142
, 1601, 1995.
139. P. Schmuki, H. Bohni, and J. A. Bardwell, In-situ characterization of anodic silicon oxide films by
AC impedance measurements,
J. Electrochem. Soc.
142
, 1705, 1995.
140. K. Ogasawara, T. Momma, and T. Osaka, Enhancement of electroluminescence from n-type porous
silicon and its photoelectrochemical behavior,
J. Electrochem. Soc.
142
, 1874, 1995.
141. J. G. Park and M. F. Pas, Effects of drying methods and wettability of silicon on the formation of
water marks in semiconductor processing,
J
.
Electrochem. Soc.
142
, 2028, 1995.
142. L. Torcheux, A. Mayeux, and M. Chemla, Electrochemical coupling effects on the corrosion of silicon
samples in HF solutions,
J. Electrochem. Soc.
142
, 2037, 1995.
143. C. Wisniewski, I. Denicolo, and I. A. Hummelgen, Electrochemically deposited cobalt thin films on
p-type silicon and its characterization,
J. Electrochem. Soc.
142
, 3889, 1995.
144. T. Aoyama, T. Yamazaki, and T. Ito, Nonuniformities in chemical oxides on silicon surfaces formed
during wet chemical cleaning,
J. Electrochem. Soc.
142
, 2280, 1995.
145. I. Teerlinck, P. W. Mertens, H. F. Schmidt, M. Meuris, and M. M. Heyns, Impact of the electrochem-
ical properties of silicon wafer surfaces on coper outpluting from HF solutions,
J. Electrochem. Soc.
142
, 3323, 1995.
146. V. Bertagna, C. Plougonven, F. Rouelle, and M. Chemla, p- and n-type silicon electrochemical prop-
erties in dilute hydrofluoric acid solutions,
J. Electrochem. Soc.
142
, 3532, 1995.
147. J. B. Flynn, Saturation currents in germanium and silicon electrodes,
J. Electrochem. Soc.
105
, 715,
1958.
148. A. S. Tenney and M. Ghezzo, Etch rates of doped oxides in solutions of buffered HF,
J. Electrochem.
Soc.
129
, 1091, 1973.
149. H. Robbins and B. Schwartz, Chemical etching of silicon. I. The system HF,
and
J.
Electrochem. Soc.
106
, 505, 1959.
150. H. Robbins and B. Schwartz, Chemical etching of silicon. II. The system HF,
and
J. Electrochem. Soc.
107
, 108, 1960.
151. E. D. Palik, V. M. Bermudez, and O. J. Glembocki, Ellipsometric study of the etch-stop mechanism
in heavily doped silicon,
J. Electrochem. Soc.
133,
135, 1985.
152. H. A. Waggener, Electrochemically controlled thinning of silicon,
Bell Syst. Tech. J.
473
, 1970.
153. V. Harrap, Equal etch baths of and utilizing HF dilution and temperature dependence, in
Semiconductor Silicon,
H. R. Hoff and U. Burgess (eds.), p. 354, Electrochemical Society, Penning-
ton 1973.
