Chemistry Reference
In-Depth Information
and about 0.3% for nondegenerately doped
p
-Si
.
647
It has been suggested that the lattice
misorientation of the PS on moderately doped
-Si is due to the presence of compres-
sive strain caused by the lattice expansion in the PS.
566,649,650
On the other hand, the
increased lattice spacing is attributed to the adsorption of H atoms on the pore surface.
647
The larger distortion for the PS on nondegenerately doped
p
-Si is due to the larger
surface area in order to accommodate more hydrogen atoms per volume of Si. Amor-
p
