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also favors branching. Thus, branching is increased with decreasing current density
which generates smaller pores. 763
The degree of branching and interpore connection, similar to pore diameter,
depends strongly on doping concentration. The most highly connected PS is found in
the PS of lowly doped p type and the micro PS of illuminated
, on which the pores
are extremely small, less than a few nanometers. 60 On the other hand, well-separated
and straight pores are generally found on moderately or lowly doped
n -Si
n -Si
. Under certain
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